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Omron EE-SX670-WR 1M Photomicrosensor

Omron EE-SX670-WR 1M is a pre-wired through-beam photomicrosensor designed around a fixed 5 mm sensing slot. Its integrated transmitting and receiving sections maintain a non-modulated optical path across the opening, allowing the NPN output condition to change as a target passes through the sensing point. Dark-ON and Light-ON operation can be selected to match the required switching logic. The sensor operates from 5 to 24 VDC and has a stated current consumption of 35 mA. Its output supports up to 100 mA load current, while a red indicator supplies visual operating status. A 1 m pre-wired cable provides direct electrical connection from the sensor. The EE-SX670-WR 1M supports the pre-wired slot sensor range across Omron Pre-Wired Sensor Products.

Omron EE-SX670-WR 1M Photomicro Sensors
BrandOmron
ProductPhotomicro Sensors
Model NumberEE-SX670-WR 1M

Omron EE-SX670-WR 1M Photomicrosensor – Technical Specifications

SpecificationValue
TypeStandard
Sensing MethodThroughbeam with slot
Sensing Distance5 mm
Power Supply Voltage5 to 24 VDC
Control Output (Output Type)NPN
Connection MethodPre-wired 1 M cable
Cable Length1 m
Current Consumption35 mA
Operation ModeDark-ON/Light-ON
Control Output (Residual Voltage)at 100 mA load current: 0.8 V max. at 40 mA load current: 0.4 V max.
Control Output (Load Current)100 mA max.
IndicatorLight indicator (red)
Luminous MethodNon-modulated
Ambient Temperature (Operating)-25 to 55 ℃ (with no freezing or condensation)
Ambient Temperature (Storage)-30 to 80 ℃ (with no freezing or condensation)
Ambient Humidity (Operating)5 to 85 % (with no condensation)
Ambient Humidity (Storage)5 to 95 % (with no condensation)
Vibration ResistanceDestruction: 20 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods)
Shock ResistanceDestruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Degree Of ProtectionIP50
MaterialCase: Polybutylene terephthalate (PBT) Emitter/Receiver Cover: Polycarbonate (PC)

The Omron EE-SX670-WR 1M Photomicrosensor uses a built-in through-beam optical arrangement across a fixed 5 mm slot. The sensing sections are integrated into the body, maintaining a predefined optical path across the opening while a machine component passes through the slot. The unit operates from 5 to 24 VDC and provides an NPN output with selectable Dark-ON or Light-ON operation. Current consumption is specified at 35 mA, and the output supports a maximum load current of 100 mA. Residual voltage is stated at 0.8 V max. with a 100 mA load and 0.4 V max. with a 40 mA load. A red light indicator provides operating status, while the optical signal is non-modulated. Electrical connection is provided through a 1 m pre-wired cable.

The EE-SX670-WR uses a PBT case with polycarbonate emitter and receiver covers. Its operating temperature range is -25°C to 55°C, while storage extends from -30°C to 80°C without freezing or condensation. The stated vibration specification covers 20 to 2,000 Hz with peak acceleration of 100 m/s² and 1.5 mm double amplitude during the defined test period. Shock resistance is 500 m/s² three times in each X, Y, and Z direction, and the enclosure carries an IP50 rating. Its pre-wired connection suits applications where a fixed cable is preferred over a connector interface. For a related standard NPN model using a 4-pole connector instead of a pre-wired cable, see the Omron EE-SX670A.