Omron EE-SX670R Photomicrosensor
Omron EE-SX670R is a standard through-beam slot photomicrosensor designed around a fixed 5 mm sensing gap. An infrared LED provides the optical source between the integrated transmitting and receiving sections, allowing the PNP output condition to change when a target passes through the opening. Dark-ON and Light-ON operation can be selected to suit different control requirements. The sensor operates from 5 to 24 VDC and consumes 12 mA maximum. A 4-pole connector provides the electrical interface, while load short-circuit protection supports the output circuit. Fluorescent-light resistance is specified up to 1,000 lx at the receiver surface. The EE-SX670R provides connector-based PNP sensing within the standard slot sensor range from Omron Through-Beam Sensor Products.
| Brand | Omron |
| Product | Photomicro Sensors |
| Model Number | EE-SX670R |
Omron EE-SX670R Photomicrosensor – Technical Specifications
| Specification | Value |
|---|---|
| Appearance | Standard |
| Sensing Method | Throughbeam with slot |
| Sensing Distance | 5 mm |
| Light Source | Infrared LED |
| Power Supply Voltage | 5 to 24 VDC |
| Output Configuration | PNP |
| Connection Method | Connector (4 poles) |
| Current Consumption | 12 mA max. |
| Operation Mode | Dark-ON/ Light-ON (selectable) |
| Indicators | No incident light |
| Ambient Illumination | 1,000 lx max. with fluorescent light on the surface of the receiver |
| Ambient Temperature Range | Operating: −25 to +55°C, Storage: −30 to +80°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 5% to 85%, Storage: 5% to 95% (with no icing or condensation) |
| Vibration Resistance | Destruction: 20 to 2,000 Hz (peak acceleration: 100 m/s2) 1.5-mm double amplitude for 2 h (4-min periods) each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions |
| Protection Circuits | Load short circuit protection |
| Degree Of Protection | IEC60529 IP50 |
| Material | Polybutylene phthalate (PBT) |
The Omron EE-SX670R Photomicrosensor uses a standard through-beam arrangement across a fixed 5 mm slot with an infrared LED providing the optical source. The built-in sensing sections maintain the optical path inside the sensor body, allowing objects entering the slot to change the output state without separate sensing heads. The sensor operates from 5 to 24 VDC and provides a PNP output with selectable Dark-ON or Light-ON operation. Current consumption is specified at 12 mA max. A 4-pole connector provides the electrical interface, while load short-circuit protection is included. Fluorescent-light resistance is stated up to 1,000 lx at the receiver surface under the specified condition. The indicator condition is listed as no incident light, distinguishing the stated indicator behavior from some other EE-SX models.
The EE-SX670R uses PBT as its stated housing material and operates from -25°C to 55°C. Storage temperature extends from -30°C to 80°C without icing or condensation. Its vibration specification covers 20 to 2,000 Hz with peak acceleration of 100 m/s² and 1.5 mm double amplitude during the stated test cycle. Shock resistance is specified at 500 m/s² three times in each X, Y, and Z direction, while the enclosure carries an IP50 rating. Its PNP output, 4-pole connection, selectable switching logic, and standard 5 mm slot support compact machine sensing requirements. For a related PNP model in the same standard slot format with explicitly stated 50 mA load capacity, see the Omron EE-SX670P.
