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Omron EE-SX671P Photomicrosensor

Omron EE-SX671P is an L-shaped through-beam photomicrosensor designed with a fixed 5 mm sensing slot and PNP output. Its integrated transmitting and receiving sections establish a non-modulated optical path across the opening, allowing the output condition to change when a target passes through the sensing point. Dark-ON and Light-ON operation can be selected according to the required switching logic. The sensor operates from 5 to 24 VDC and consumes 12 mA with the L terminal open. Its output supports up to 50 mA load current, while a red indicator supplies visual operating status. A 4-pole connector provides removable electrical integration. The EE-SX671P provides PNP switching within the L-shaped slot sensor range from Omron PNP Sensor Products.

Omron EE-SX671P Photomicro Sensors
BrandOmron
ProductPhotomicro Sensors
Model NumberEE-SX671P

Omron EE-SX671P Photomicrosensor – Technical Specifications

SpecificationValue
TypeL-shaped
Sensing MethodThroughbeam with slot
Sensing Distance5 mm
Power Supply Voltage5 to 24 VDC
Control Output (Output Type)PNP
Connection MethodConnector (4 poles)
Current Consumption12 mA (L terminal open)
Operation ModeDark-ON/Light-ON
Control Output (Residual Voltage)at 50 mA load current: 1.3 V max.
Control Output (Load Current)50 mA max.
IndicatorLight indicator (red)
Luminous MethodNon-modulated
Ambient Temperature (Operating)-25 to 55 ℃ (with no freezing or condensation)
Ambient Temperature (Storage)-30 to 80 ℃ (with no freezing or condensation)
Ambient Humidity (Operating)5 to 85 % (with no condensation)
Ambient Humidity (Storage)5 to 95 % (with no condensation)
Vibration ResistanceDestruction: 20 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods)
Shock ResistanceDestruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Degree Of ProtectionIP50
MaterialCase: Polybutylene terephthalate (PBT) Emitter/Receiver Cover: Polycarbonate (PC)

The Omron EE-SX671P Photomicrosensor uses an L-shaped body with a built-in through-beam optical path across a fixed 5 mm sensing slot. The integrated sensing sections maintain the optical path across the opening and provide a compact arrangement for components passing through the gap. It operates from 5 to 24 VDC and provides a PNP output with selectable Dark-ON or Light-ON operation. Current consumption is specified at 12 mA with the L terminal open. Maximum load current is 50 mA, with residual voltage specified at 1.3 V max. at a 50 mA load. A red light indicator provides visual operating status, while the optical signal is non-modulated. Electrical connection is provided through a 4-pole connector, distinguishing it from pre-wired EE-SX671 PNP versions.

The EE-SX671P uses a PBT case with polycarbonate emitter and receiver covers. Operating temperature extends from -25°C to 55°C, while storage temperature ranges from -30°C to 80°C without freezing or condensation. Mechanical resistance includes vibration from 20 to 2,000 Hz with peak acceleration of 100 m/s² and the stated 1.5 mm double-amplitude test sequence. Shock resistance is 500 m/s² three times along each X, Y, and Z direction, and the enclosure carries an IP50 rating. The L-shaped geometry and PNP output make this model a counterpart to NPN EE-SX671 configurations. For a related PNP version supplied with a 1 m pre-wired cable instead of the 4-pole connector, see the Omron EE-SX671P-WR 1M.