Omron EE-SX670P-WR 1M Photomicrosensor
Omron EE-SX670P-WR 1M is a standard through-beam photomicrosensor using a fixed 5 mm slot and a 1 m pre-wired cable. An infrared LED supplies the optical source between the integrated transmitting and receiving sections, while the PNP output responds as a target passes through the sensing gap. Dark-ON and Light-ON operation can be selected according to the required switching logic. The sensor operates from 5 to 24 VDC and consumes 12 mA maximum. Load short-circuit protection is included, while resistance to fluorescent illumination is specified up to 1,000 lx at the receiver surface. The pre-wired cable provides direct electrical integration from the sensing point. The EE-SX670P-WR 1M supports the pre-wired PNP sensor range across Omron Industrial Sensor Products.

| Brand | Omron |
| Product | Photomicro Sensors |
| Model Number | EE-SX670P-WR 1M |
Omron EE-SX670P-WR 1M Photomicrosensor – Technical Specifications
| Specification | Value |
|---|---|
| Appearance | Standard |
| Sensing Method | Throughbeam with slot |
| Sensing Distance | 5 mm |
| Light Source | Infrared LED |
| Power Supply Voltage | 5 to 24 VDC |
| Output Configuration | PNP |
| Connection Method | Pre Wired, Cable Length 1M |
| Current Consumption | 12 mA max. |
| Operation Mode | Dark-ON/ Light-ON (selectable) |
| Indicators | Incident light |
| Ambient Illumination | 1,000 lx max. with fluorescent light on the surface of the receiver |
| Ambient Temperature Range | Operating: −25 to +55°C, Storage: −30 to +80°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 5% to 85%, Storage: 5% to 95% (with no icing or condensation) |
| Vibration Resistance | Destruction: 20 to 2,000 Hz (peak acceleration: 100 m/s2) 1.5-mm double amplitude for 2 h (4-min periods) each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions |
| Protection Circuits | Load short circuit protection |
| Degree Of Protection | IEC60529 IP50 |
| Material | Polybutylene phthalate (PBT) |
The Omron EE-SX670P-WR 1M Photomicrosensor uses a standard through-beam optical arrangement across a fixed 5 mm slot. An infrared LED provides the sensing light, while the integrated optical sections maintain the sensing path across the opening. The model operates from 5 to 24 VDC and provides a PNP output with selectable Dark-ON or Light-ON operation. Current consumption is specified at 12 mA max., and the sensor includes a 1 m pre-wired cable for electrical connection. Load short-circuit protection is provided. Fluorescent-light resistance is specified up to 1,000 lx at the receiver surface under the stated condition. The fixed slot arrangement supports sensing of components moving directly through the opening without requiring separate optical alignment, while the pre-wired format provides a different connection option from the connector-based EE-SX670P.
The EE-SX670P-WR uses PBT as the stated housing material. Its operating temperature range is -25°C to 55°C, while storage extends from -30°C to 80°C without icing or condensation. Mechanical resistance includes vibration from 20 to 2,000 Hz with peak acceleration of 100 m/s² and the specified 1.5 mm double-amplitude test sequence. Shock resistance is 500 m/s² three times in each X, Y, and Z direction, while the enclosure is rated IP50. Its PNP output, selectable switching mode, 5 mm slot, and 1 m cable suit applications where direct wiring is preferred. For a related PNP model using a detachable 4-pole connector instead, refer to the Omron EE-SX670P.


