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Omron EE-SX670A Photomicrosensor

Omron EE-SX670A is a standard through-beam slot photomicrosensor designed around a fixed 5 mm sensing gap. Its integrated transmitting and receiving sections establish a non-modulated optical path across the opening, allowing the NPN output condition to respond when a target passes through the slot. Dark-ON and Light-ON operation can be selected according to the required switching logic. The sensor operates from 5 to 24 VDC, with current consumption specified at 12 mA while the L terminal is open. The output supports up to 100 mA load current, and a 4-pole connector provides the electrical interface. A red indicator operates under the stated no-incident-light condition. The EE-SX670A supports the standard 5 mm sensor range from Omron Photomicrosensor Products.

Omron EE-SX670A Photomicro Sensors
BrandOmron
ProductPhotomicro Sensors
Model NumberEE-SX670A

Omron EE-SX670A Photomicrosensor – Technical Specifications

SpecificationValue
TypeStandard
Sensing MethodThroughbeam with slot
Sensing Distance5 mm
Power Supply Voltage5 to 24 VDC
Control Output (Output Type)NPN
Connection MethodConnector (4 poles)
Current Consumption12 mA (L terminal open)
Operation ModeDark-ON/Light-ON
Control Output (Residual Voltage)at 100 mA load current: 0.8 V max. at 40 mA load current: 0.4 V max.
Control Output (Load Current)100 mA max.
IndicatorNo incident light (red)
Luminous MethodNon-modulated
Ambient Temperature (Operating)-25 to 55 ℃ (with no freezing or condensation)
Ambient Temperature (Storage)-30 to 80 ℃ (with no freezing or condensation)
Ambient Humidity (Operating)5 to 85 % (with no condensation)
Ambient Humidity (Storage)5 to 95 % (with no condensation)
Vibration ResistanceDestruction: 20 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods)
Shock ResistanceDestruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Degree Of ProtectionIP50
MaterialCase: Polybutylene terephthalate (PBT) Emitter/Receiver Cover: Polycarbonate (PC)

The Omron EE-SX670A Photomicrosensor uses a standard through-beam arrangement across a fixed 5 mm sensing slot. Its built-in sensing sections maintain the optical path inside the sensor body, allowing a machine component moving through the slot to change the output state without separately mounted optical heads. The unit operates from 5 to 24 VDC and provides an NPN output with selectable Dark-ON or Light-ON switching. Current consumption is specified at 12 mA with the L terminal open. The output supports up to 100 mA load current, while residual voltage is specified at 0.8 V max. with a 100 mA load and 0.4 V max. with a 40 mA load. A 4-pole connector provides the electrical interface, and the optical signal is non-modulated. The red indicator operates under the stated no-incident-light condition.

The EE-SX670A uses a PBT case with polycarbonate emitter and receiver covers. Operating temperature extends from -25°C to 55°C, while storage temperature covers -30°C to 80°C without freezing or condensation. Mechanical resistance includes the stated 20 to 2,000 Hz vibration range with peak acceleration of 100 m/s² and 1.5 mm double amplitude during the specified test sequence. Shock resistance is 500 m/s² three times along each X, Y, and Z direction, while the enclosure is rated IP50. Its standard body, NPN output, selectable switching logic, and 4-pole connection suit compact slot-sensing arrangements. For a related PNP model using the same standard 5 mm slot format, see the Omron EE-SX670P.