Omron EE-SX671P-WR 1M Photomicrosensor
Omron EE-SX671P-WR 1M is an L-shaped through-beam photomicrosensor designed around a fixed 5 mm slot with a 1 m pre-wired cable. An infrared LED provides the optical source between the integrated transmitting and receiving sections, while the PNP output changes according to the selected switching mode as a target enters the gap. Dark-ON and Light-ON operation can be selected, and operating power is supplied from 5 to 24 VDC. Current consumption is specified at 12 mA maximum, while load short-circuit protection supports the output circuit. Fluorescent-light resistance is specified up to 1,000 lx at the receiver surface. The EE-SX671P-WR 1M combines pre-wired integration with the L-shaped PNP sensor range across Omron Pre-Wired Sensor Products.
| Brand | Omron |
| Product | Photomicro Sensors |
| Model Number | EE-SX671P-WR 1M |
Omron EE-SX671P-WR 1M Photomicrosensor – Technical Specifications
| Specification | Value |
|---|---|
| Appearance | L-shaped |
| Sensing Method | Throughbeam with slot |
| Sensing Distance | 5 mm |
| Light Source | Infrared LED |
| Power Supply Voltage | 5 to 24 VDC |
| Output Configuration | PNP |
| Connection Method | Pre Wired, Cable Length 1M |
| Current Consumption | 12 mA max. |
| Operation Mode | Dark-ON/ Light-ON (selectable) |
| Indicators | Incident light |
| Ambient Illumination | 1,000 lx max. with fluorescent light on the surface of the receiver |
| Ambient Temperature Range | Operating: −25 to +55°C, Storage: −30 to +80°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 5% to 85%, Storage: 5% to 95% (with no icing or condensation) |
| Vibration Resistance | Destruction: 20 to 2,000 Hz (peak acceleration: 100 m/s2) 1.5-mm double amplitude for 2 h (4-min periods) each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions |
| Protection Circuits | Load short circuit protection |
| Degree Of Protection | IEC60529 IP50 |
| Material | Polybutylene phthalate (PBT) |
The Omron EE-SX671P-WR 1M Photomicrosensor uses an L-shaped through-beam arrangement across a fixed 5 mm sensing slot. An infrared LED provides the optical source, while the integrated sensing sections maintain the optical path across the opening. The model operates from 5 to 24 VDC and provides a PNP output with selectable Dark-ON or Light-ON switching. Current consumption is specified at 12 mA max., and a 1 m pre-wired cable provides the electrical connection. Load short-circuit protection is included. Fluorescent-light resistance is specified up to 1,000 lx at the receiver surface under the stated condition. Its L-shaped structure provides a compact mounting option, while the fixed cable differentiates it from the connector-based EE-SX671P.
The EE-SX671P-WR uses PBT as the stated housing material. Operating temperature extends from -25°C to 55°C, while storage ranges from -30°C to 80°C without icing or condensation. The specified vibration resistance covers 20 to 2,000 Hz with peak acceleration of 100 m/s² and 1.5 mm double amplitude during the defined test cycle. Shock resistance is 500 m/s² three times in each X, Y, and Z direction, while the enclosure carries an IP50 rating. Its PNP output, selectable switching logic, 5 mm slot, L-shaped body, and 1 m pre-wired cable suit compact machinery where direct wiring is preferred. For the related PNP version with a 4-pole connector, see the Omron EE-SX671P.
