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Omron EE-SX672P Photomicrosensor

Omron EE-SX672P is a T-shaped through-beam photomicrosensor designed around a fixed 5 mm sensing slot with the slot center positioned at 7 mm. Its integrated transmitting and receiving sections establish a non-modulated optical path across the opening, allowing the PNP output condition to change when a target moves through the slot. Dark-ON and Light-ON operation can be selected according to the required switching logic. The sensor operates from 5 to 24 VDC and consumes 12 mA with the L terminal open. Its output supports a maximum load current of 50 mA, while a red indicator supplies visual status. A 4-pole connector provides the electrical interface. The EE-SX672P provides PNP switching within the T-shaped slot sensor range from Omron PNP Sensor Products.

Omron EE-SX672P Photomicro Sensors
BrandOmron
ProductPhotomicro Sensors
Model NumberEE-SX672P

Omron EE-SX672P Photomicrosensor – Technical Specifications

SpecificationValue
TypeT-shaped, slot center 7 mm
Sensing MethodThroughbeam with slot
Sensing Distance5 mm
Power Supply Voltage5 to 24 VDC
Control Output (Output Type)PNP
Connection MethodConnector (4 poles)
Current Consumption12 mA (L terminal open)
Operation ModeDark-ON/Light-ON
Control Output (Residual Voltage)at 50 mA load current: 1.3 V max.
Control Output (Load Current)50 mA max.
IndicatorLight indicator (red)
Luminous MethodNon-modulated
Ambient Temperature (Operating)-25 to 55 ℃ (with no freezing or condensation)
Ambient Temperature (Storage)-30 to 80 ℃ (with no freezing or condensation)
Ambient Humidity (Operating)5 to 85 % (with no condensation)
Ambient Humidity (Storage)5 to 95 % (with no condensation)
Vibration ResistanceDestruction: 20 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods)
Shock ResistanceDestruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Degree Of ProtectionIP50
MaterialCase: Polybutylene terephthalate (PBT) Emitter/Receiver Cover: Polycarbonate (PC)

The Omron EE-SX672P Photomicrosensor uses a T-shaped body with a fixed 5 mm through-beam sensing slot and a slot center positioned at 7 mm. Its internal sensing sections establish the optical path across the opening while machine components pass through the slot. The model operates from 5 to 24 VDC and provides a PNP output with selectable Dark-ON or Light-ON switching. Current consumption is specified at 12 mA with the L terminal open, while maximum load current is 50 mA. Residual voltage is stated at 1.3 V max. with a 50 mA load. A red light indicator provides operating status, and a 4-pole connector handles electrical connection. The optical signal is non-modulated.

Designed around the 7 mm slot-center geometry, the EE-SX672P uses a PBT case with polycarbonate emitter and receiver covers. Operating temperature extends from -25°C to 55°C, while storage covers -30°C to 80°C without freezing or condensation. Mechanical resistance includes vibration from 20 to 2,000 Hz with peak acceleration of 100 m/s² and the specified 1.5 mm double-amplitude test sequence. Shock resistance is 500 m/s² three times in each X, Y, and Z direction, while the enclosure carries an IP50 rating. Its PNP output distinguishes it from NPN T-shaped EE-SX672 models while retaining selectable switching logic and the same 5 mm slot. For a pre-wired PNP alternative, see the Omron EE-SX672P-WR 1M.