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Omron EE-SX670 Photomicrosensor

Omron EE-SX670 is a through-beam slot photomicrosensor designed around a fixed 5 mm sensing gap with selectable switching logic. Its integrated transmitting and receiving sections maintain a non-modulated optical path across the opening, allowing the NPN output state to change when a target passes through the slot. Dark-ON and Light-ON operation can be selected, while operating power is supplied from 5 to 24 VDC. Current consumption is specified at 12 mA with the L terminal open, and the output supports up to 100 mA load current. A 4-pole connector provides the electrical interface, while a red indicator gives visual operating feedback. The EE-SX670 provides selectable switching within the 5 mm grooved sensor range from Omron Grooved Sensor Products.

Omron EE-SX670 Photomicro Sensors
BrandOmron
ProductPhotomicro Sensors
Model NumberEE-SX670

Omron EE-SX670 Photomicrosensor – Technical Specifications

SpecificationValue
TypeStandard
Sensing MethodThroughbeam with slot
Sensing Distance5 mm
Power Supply Voltage5 to 24 VDC
Control Output (Output Type)NPN
Connection MethodConnector (4 poles)
Current Consumption12 mA (L terminal open)
Operation ModeDark-ON/Light-ON
Control Output (Residual Voltage)at 100 mA load current: 0.8 V max. at 40 mA load current: 0.4 V max.
Control Output (Load Current)100 mA max.
IndicatorLight indicator (red)
Luminous MethodNon-modulated
Ambient Temperature (Operating)-25 to 55 ℃ (with no freezing or condensation)
Ambient Temperature (Storage)-30 to 80 ℃ (with no freezing or condensation)
Ambient Humidity (Operating)5 to 85 % (with no condensation)
Ambient Humidity (Storage)5 to 95 % (with no condensation)
Vibration ResistanceDestruction: 20 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods)
Shock ResistanceDestruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Degree Of ProtectionIP50
MaterialCase: Polybutylene terephthalate (PBT) Emitter/Receiver Cover: Polycarbonate (PC)

The Omron EE-SX670 Photomicrosensor uses a through-beam optical path across a fixed 5 mm sensing slot. Its built-in sensing sections maintain the optical path across the opening, allowing a machine component passing through the gap to change the output state. The sensor operates from 5 to 24 VDC and provides an NPN output with selectable Dark-ON or Light-ON operation. Current consumption is specified at 12 mA with the L terminal open. Maximum load current is 100 mA, while residual voltage is specified at 0.8 V max. at a 100 mA load and 0.4 V max. at 40 mA. A red light indicator provides visual operating status. The optical signal is non-modulated, and electrical connection is provided through a 4-pole connector.

The EE-SX670 uses a PBT case with polycarbonate emitter and receiver covers. Operating temperature extends from -25°C to 55°C, while storage is specified from -30°C to 80°C without freezing or condensation. Mechanical resistance includes vibration from 20 to 2,000 Hz with peak acceleration of 100 m/s² and the specified 1.5 mm double-amplitude test sequence. Shock resistance is rated at 500 m/s² three times in each X, Y, and Z direction, and the enclosure carries an IP50 rating. Its selectable Light-ON or Dark-ON logic and 100 mA load capacity distinguish it from the fixed Light-ON EE-SX47x models. For a related 5 mm connector-type model with fixed Light-ON operation, see the Omron EE-SX470.