Omron EE-SPW411 Photomicrosensor
Omron EE-SPW411 is a through-beam photomicrosensor designed for target sensing across a specified distance of 1 m. Its transmitting and receiving sides establish a modulated optical path, and interruption of that path changes the NPN switching state. Light-ON operation defines the output behavior, while the sensor operates from a 5 to 24 VDC supply. Each optical side consumes up to 20 mA, and the output supports a maximum load current of 100 mA. A special connector provides the electrical interface, while a red indicator gives visual status information. Within the EE Series, the EE-SPW411 supports long-distance optical sensing within the 1 m through-beam photomicrosensor range across Omron Long-Range Optical Sensors.
| Brand | Omron |
| Product | Photomicro Sensors |
| Model Number | EE-SPW411 |
Omron EE-SPW411 Photomicrosensor – Technical Specifications
| Specification | Value |
|---|---|
| Sensing Method | Through-beam type |
| Sensing Distance | 1 m |
| Power Supply Voltage | 5 to 24 VDC |
| Control Output (Output Type) | NPN |
| Connection Method | Special connector |
| Current Consumption | Emitter/Receiver each: 20 mA max. |
| Operation Mode | Light-ON |
| Control Output (Residual Voltage) | at 100 mA load current: 0.8 V max. at 10 mA load current: 0.4 V max. |
| Control Output (Load Current) | 100 mA max. |
| Indicator | Light indicator (red) |
| Luminous Method | Modulated |
| Ambient Temperature (Operating) | -10 to 55 ℃ |
| Ambient Temperature (Storage) | -25 to 65 ℃ |
| Ambient Humidity (Operating) | 5 to 85 % |
| Ambient Humidity (Storage) | 5 to 95 % |
| Vibration Resistance | Destruction: 200 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods) |
| Shock Resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions |
| Degree Of Protection | IP60 |
| Material | Case: Polybutylene terephthalate (PBT) Lens: Polycarbonate (PC) |
The Omron EE-SPW411 Photomicrosensor provides through-beam sensing across a stated distance of up to 1 m. Its modulated optical arrangement establishes a beam between the transmitting and receiving sides, while interruption of that path controls the NPN switching state. The sensor operates from 5 to 24 VDC, with the emitter and receiver each consuming up to 20 mA. Light-ON operation defines the output sequence. Load current is specified at 100 mA maximum, while residual voltage is limited to 0.8 V at a 100 mA load and 0.4 V at 10 mA. A special connector supports electrical integration, and a red indicator supplies visual operating feedback. This connector-based arrangement provides long-range sensing without a fixed pre-wired cable.
Where an Omron through-beam photomicrosensor requires Light-ON switching and a 1 m optical span, the relevant model is the EE-SPW411. Operating temperature extends from -10 to 55°C and storage from -25 to 65°C. PBT is specified for the case, while polycarbonate is listed for the lens. Its modulated light arrangement supports the defined through-beam sensing path, and the special connector provides a detachable interface at the installation point. The Light-ON characteristic distinguishes this unit from the EE-SPW311, which uses Dark-ON operation while retaining the same stated 1 m sensing distance. For that related Dark-ON configuration, see EE-SPW311.
