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Omron EE-SPX303N Photomicrosensor

Omron EE-SPX303N is a broad-slot photomicrosensor with a specified 13 mm through-beam sensing gap. Its 940 nm infrared LED establishes the optical path across the slot, while the sensor can respond to opaque targets as small as 2.2 × 0.5 mm. The NPN voltage output supports compatible control circuitry with a load current up to 80 mA. Operating power is 12 to 24 VDC, current consumption is specified at 15 mA maximum, and a special connector provides electrical connection. A red indicator gives visual switching status, while the minimum response frequency is 100 Hz. The EE-SPX303N provides additional target clearance within the 13 mm broad-slot sensor range across Omron Broad-Slot Photomicrosensors.

Omron EE-SPX303N Photomicro Sensors
BrandOmron
ProductPhotomicro Sensors
Model NumberEE-SPX303N

Omron EE-SPX303N Photomicrosensor – Technical Specifications

SpecificationValue
Sensing MethodThroughbeam with slot
Sensing Distance13 mm
Light SourceInfrared LED (pulse lighting) with a peak wavelength of 940 nm
Power Supply Voltage12 to 24 VDC
Sensing ObjectOpaque: 2.2 × 0.5 mm min.
Differential Distance0.05 mm max.
Connection MethodSpecial connector
Current Consumption15 mA max.
Control OutputNPN voltage output: Load power supply voltage: 12 to 24 VDC Load current: 80 mA max. OFF current: 0.5 mA max. 80 mA load current with a residual voltage of 2.0 V max. 10 mA load current with a residual voltage of 1.0 V max.
IndicatorLight indicator (red)
Response Frequency100 Hz min.
Ambient Illumination3,000 lx max. with incandescent light or sunlight on the surface of the receiver.
Ambient Temperature (Operating)-10 to 55 ℃
Ambient Temperature (Storage)-25 to 65 ℃
Ambient Humidity (Operating)5 to 85 %
Ambient Humidity (Storage)5 to 95 %
Vibration ResistanceDestruction: 10 to 55 Hz, 1.5-mm double amplitude for 2 h each in X, Y, and Z directions
Shock ResistanceDestruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Protection CircuitsPower supply reverse polarity protection, Output reverse polarity protection
Degree Of ProtectionIEC IP50
MaterialPolycarbonate
WeightApprox. 4 g

The Omron EE-SPX303N Photomicrosensor uses a 13 mm through-beam slot with a 940 nm pulse-driven infrared LED. Its sensing arrangement can respond to opaque targets down to 2.2 × 0.5 mm, while differential distance is specified at 0.05 mm maximum. The sensor operates from 12 to 24 VDC and consumes up to 15 mA. Its NPN voltage output supports an 80 mA maximum load current, with OFF current of 0.5 mA maximum. Residual voltage is specified at 2 V maximum with an 80 mA load and 1 V maximum at 10 mA. A special connector provides electrical connection, and a red indicator supplies visual status. Minimum response frequency is specified at 100 Hz.

For an Omron broad-slot photomicrosensor requiring a 13 mm gap and NPN voltage output, the relevant model is the EE-SPX303N. Operating temperature extends from -10 to 55°C and storage from -25 to 65°C. The polycarbonate body weighs approximately 4 g, providing a compact mechanical format around the wider opening. Power-supply reverse-polarity and output reverse-polarity protection are included in the supplied specification. The 13 mm gap provides considerably more physical clearance than 3.6 mm SPX models while preserving a fixed optical relationship between the sensing elements. For a related 13 mm model with otherwise closely matched optical and electrical characteristics, see EE-SPX403N.