Omron EE-SPW311 Photomicrosensor
Omron EE-SPW311 is a through-beam photomicrosensor specified for object sensing across a distance of up to 1 m. The separate optical path allows the switching state to change when a target interrupts the transmitted beam. Its NPN output communicates this state to compatible control circuitry, while Dark-ON operation defines the output response. The sensor operates from 5 to 24 VDC and uses a 4-pole connector for electrical integration. The emitter and receiver each consume up to 20 mA, and the output supports a maximum load current of 100 mA. A red light indicator provides operating status. Within the EE Series, the EE-SPW311 provides longer-range sensing within the through-beam photomicrosensor range across Omron Industrial Sensors.
| Brand | Omron |
| Product | Photomicro Sensors |
| Model Number | EE-SPW311 |
Omron EE-SPW311 Photomicrosensor – Technical Specifications
| Specification | Value |
|---|---|
| Sensing Method | Throughbeam with slot |
| Sensing Distance | 1 m |
| Power Supply Voltage | 5 to 24 VDC |
| Control Output (Output Type) | NPN |
| Connection Method | Connector (4 poles) |
| Current Consumption | Emitter/Receiver each: 20 mA max. |
| Operation Mode | Dark-ON |
| Control Output (Residual Voltage) | at 100 mA load current: 0.8 V max. at 10 mA load current: 0.4 V max. |
| Control Output (Load Current) | 100 mA max. |
| Indicator | Light indicator (red) |
| Luminous Method | Modulated |
| Ambient Temperature (Operating) | -10 to 55 ℃ |
| Ambient Temperature (Storage) | -25 to 65 ℃ |
| Ambient Humidity (Operating) | 5 to 85 % |
| Ambient Humidity (Storage) | 5 to 95 % |
| Vibration Resistance | Destruction: 200 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods) |
| Shock Resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions |
| Degree Of Protection | IP60 |
| Material | Case: Polybutylene terephthalate (PBT) Lens: Polycarbonate (PC) |
The Omron EE-SPW311 Photomicrosensor uses through-beam sensing across a stated distance of up to 1 m. The optical system uses separate transmitting and receiving sides, and interruption of the beam changes the NPN output state. The sensor operates from 5 to 24 VDC, while the emitter and receiver each consume up to 20 mA. Dark-ON operation defines the switching behavior. The output supports a maximum load current of 100 mA, with residual voltage specified at 0.8 V maximum at a 100 mA load and 0.4 V maximum at 10 mA. A 4-pole connector provides electrical integration, while a red light indicator supplies visual status. The modulated optical arrangement forms the basis of the stated long-distance photomicrosensor configuration.
For an Omron through-beam photomicrosensor requiring NPN output and a 1 m sensing span, the relevant model is the EE-SPW311. Operating temperature is specified from -10 to 55°C, while storage extends from -25 to 65°C. The case is listed as PBT and the lens as polycarbonate. Its connector interface differs from the pre-wired EE-SPW321, while the 1 m sensing distance is considerably longer than that model's 300 mm specification. Shock resistance is stated at 500 m/s², with a separate vibration specification also provided. For a related pre-wired photomicrosensor with a shorter 300 mm sensing distance and built-in amplifier arrangement, see EE-SPW321.
