Omron EE-SX770P 2M Photomicrosensor
Omron EE-SX770P 2M is a standard through-beam slot photomicrosensor that provides PNP switching across a fixed 5 mm sensing gap. A GaAs infrared LED operating at 940 nm creates the internal optical path and supports sensing of opaque targets as small as 2 × 0.8 mm. Dark-ON operation defines the switching response, while the sensor runs from 5 to 24 VDC. Current consumption is specified at 12 mA maximum. A 2 m pre-wired cable provides the electrical connection, and a red light indicator supplies visual status. Its PBT case supports the compact slot body. Within the EE Series, the EE-SX770P 2M supports the through-beam slot sensor range from Omron industrial sensing.
| Brand | Omron |
| Product | Photomicro Sensors |
| Model Number | EE-SX770P 2M |
Omron EE-SX770P 2M Photomicrosensor – Technical Specifications
| Specification | Value |
|---|---|
| Appearance | Standard |
| Sensing Method | Through-beam with slot |
| Sensing Distance | 5 mm |
| Standard Sensing Object | Opaque, 2 x 0.8 mm min. |
| Light Source | GaAs infrared LED (940 nm) |
| Power Supply Voltage | 5 to 24 VDC |
| Output Configuration | PNP |
| Connection Method | Pre-wired 2 M Cable |
| Current Consumption | 12 mA max. |
| Operation Mode | Dark-ON |
| Indicators | Light indicator (red) |
| Ambient Temperature Range | Operating: -25 to 55 ℃ (with no icing) Storage: -30 to 80 ℃ (with no icing) |
| Ambient Humidity Range | Operating: 5 to 85 % (with no condensation) Storage: 5 to 95 % (with no condensation) |
| Vibration Resistance | Destruction: 10 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods) |
| Shock Resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions |
| Degree Of Protection | IP64 IEC60529 |
| Material | Case: Polybutylene terephthalate (PBT) |
| Weight | Package: Approx. 20 g |
The Omron EE-SX770P 2M Photomicrosensor uses a standard through-beam optical arrangement across a fixed 5 mm sensing slot and provides a PNP output. A GaAs infrared LED operating at 940 nm establishes the internal beam and supports sensing of opaque targets as small as 2 × 0.8 mm. Dark-ON operation defines the switching response, while the sensor operates from a 5 to 24 VDC supply. Current consumption is specified at 12 mA maximum. A 2 m pre-wired cable provides the electrical connection, and a red light indicator supplies visual operating status. Because the optical path is formed directly across the slot, the sensing point remains defined by the physical opening rather than target reflectivity.
The EE-SX770P uses a PBT case and operates from -25°C to 55°C, with storage specified from -30°C to 80°C. Operating humidity extends from 5% to 85% without condensation. Mechanical ratings include vibration from 10 to 2,000 Hz under the listed conditions and shock resistance of 500 m/s² along each axis. The enclosure is rated IP64. Its main electrical distinction from the EE-SX770 is the PNP output, while both models retain Dark-ON operation, a 940 nm infrared source, a fixed 5 mm slot, and a 2 m pre-wired connection. For the related NPN version using the same basic sensing arrangement, see the Omron EE-SX770 2M.
