Many procurement teams check EE-SX770P-2M against Omron Photoelectric Sensor, Omron Ee Sx671 and Omron Photoelectric Sensors E3T Series before signing purchase orders, verifying quality, compliance, and after-sales support availability.
Omron EE-SX770P 2M Photomicrosensor
The Omron EE-SX770P 2M Photomicrosensor offers Through-beam with slot, 5 mm Sensing distance, PNP Output, Pre-wired 2 M Cable, GaAs infrared LED (940 nm), 5 to 24 VDC Power supply voltage, Dark-ON mode. Manufactured by Omron under the Omron Photoelectric Sensors category, this model belongs to the Omron EE Series.
| Brand | Omron |
| Product Type | Photomicro Sensor |
| Model Number | EE-SX770P 2M |
Omron EE-SX770P 2M Photomicrosensor β Technical Specifications
| Specification | Value |
|---|---|
| Appearance | Standard |
| Sensing Method | Through-beam with slot |
| Sensing Distance | 5 mm |
| Standard Sensing Object | Opaque, 2 x 0.8 mm min. |
| Light Source | GaAs infrared LED (940 nm) |
| Power Supply Voltage | 5 to 24 VDC |
| Output configuration | PNP |
| Connection Method | Pre-wired 2 M Cable |
| Current Consumption | 12 mA max. |
| Operation Mode | Dark-ON |
| Indicators | Light indicator (red) |
| Ambient Temperature Range | Operating: -25 to 55 β (with no icing) Storage: -30 to 80 β (with no icing) |
| Ambient Humidity Range | Operating: 5 to 85 % (with no condensation) Storage: 5 to 95 % (with no condensation) |
| Vibration Resistance | Destruction: 10 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods) |
| Shock Resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions |
| Degree of Protection | IP64 IEC60529 |
| Material | Case: Polybutylene terephthalate (PBT) |
| Weight | Package: Approx. 20 g |
The Omron EE-SX770P 2M is a compact photomicrosensor built for precise object detection in narrow or limited-space environments. Featuring a slot-type, through-beam sensing method, this model offers a 5 mm sensing distance and is optimized for detecting opaque objects as small as 2 Γ 0.8 mm. The infrared GaAs LED (940 nm) provides consistent beam control, while its Dark-ON operation ensures output is activated when the beam is blocked, making it ideal for part presence confirmation, edge detection, and micro-positioning in automation systems.
This sensor operates on a wide input voltage range from 5 to 24 VDC () with ripple tolerance of up to 10% (p-p). It is configured with a PNP output and connects via a pre-wired 2-meter slim cable for easy and space-saving installation. With low power consumption at just 12 mA max., the EE-SX770P 2M is ideal for high-density control panels and equipment where power efficiency and wiring simplicity matter.
The unit includes a red LED light indicator to show incident beam status, simplifying alignment and diagnostics. Designed to handle harsh operating conditions, the sensor functions across a wide ambient temperature range of β25Β°C to 55Β°C (storage β30Β°C to 80Β°C), and relative humidity from 5% to 85% (non-condensing). Itβs built with high mechanical resilience, enduring vibrations up to 2000 Hz and shock up to 500 m/sΒ² across all axes.
Its compact housing is made of durable polybutylene terephthalate (PBT) and complies with IP64 protection under IEC 60529, ensuring resistance against dust ingress and light splashes. The Omron EE-SX770P 2M is widely used in semiconductor handling, electronic assembly, packaging systems, and miniaturized machinery where reliable slot sensing in a tight footprint is required.
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