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Omron E3ZM-R66 Photoelectric Sensor

Omron E3ZM-R66 is a retro-reflective photoelectric sensor with an M.S.R. function and supplied sensing values of 4 m [100 mm] and 3 m [100 mm]. Its 870 nm infrared LED provides the optical source, while the PNP output communicates the switching state to compatible machine-control inputs. Light-ON or Dark-ON operation can be selected with the switch, and a one-turn adjuster supports setup. The sensor operates from 10 to 30 VDC, consumes up to 25 mA, and uses an M8 4-pin connector for electrical integration. Response time is specified at 1 ms maximum. Within the E3ZM Series, the E3ZM-R66 provides connector wiring within the MSR retro-reflective sensor range across Omron Automation Products.

Omron E3ZM-R66 Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3ZM-R66

Omron E3ZM-R66 Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodRetroreflective (with M.S.R. function)
Sensing Distance4 m [100 mm], 3 m [100 mm]
Standard Sensing ObjectOpaque: 75 mm dia. min.
Light SourceInfrared LED (870 nm)
Power Supply Voltage10 to 30 VDC
Output ConfigurationPNP
Connection MethodConnector type (M8, 4 pins)
Current Consumption25 mA max.
Control OutputLoad power supply voltage: 30 VDC max., Load current: 100 mA max. (Residual voltage: 2 V max.)
Operation ModeLight-ON/Dark-ON switch
Response TimeOperate or reset: 1 ms max.
Sensitivity AdjustmentOne-turn adjuster
IndicatorsOperation indicator (yellow), Stability indicator (green) (Emitter has only power supply indicator (green).)
Ambient IlluminationIncandescent lamp: 3,000 lx max. Sunlight 10,000 lx max.
Ambient Temperature RangeOperating: -25°C to 55°C, Storage: -40°C to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 35% to 85%, Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC
Dielectric Strength1,000 VAC at 50/60 Hz for 1 min
Vibration ResistanceDestruction: 10 to 55 Hz, 1.5 mm double amplitude for 2 hours each in X, Y, and Z directions
Shock ResistanceDestruction: 500 m/s2 3 times each in X, Y, and Z directions
Protection CircuitsReversed power supply polarity protection, Output short-circuit protection, Mutual interference prevention, and Reversed output polarity protection
Degree Of ProtectionIEC: IP67, DIN 40050-9: IP69K
MaterialSUS316, Methacrylic resin, PES (polyether sulfone), PEEK (polyether ether ketone), Fluoro rubber
WeightApprox. 40 g

The Omron E3ZM-R66 Photoelectric Sensor uses retro-reflective sensing with an M.S.R. function and supplied sensing values of 4 m [100 mm] and 3 m [100 mm]. An 870 nm infrared LED provides the optical source, while the PNP output communicates the switching condition to compatible industrial control circuitry. The sensor operates from 10 to 30 VDC and consumes up to 25 mA. Load supply voltage is specified up to 30 VDC with load current up to 100 mA and residual voltage of 2 V maximum. A Light-ON or Dark-ON switch selects the output behavior, while operate or reset time is 1 ms maximum. A one-turn adjuster supports setup, and the M8 4-pin connector provides a detachable electrical interface. Yellow operation and green stability indicators provide visual status information.

For an Omron MSR retro-reflective sensor requiring PNP output and connector wiring, the relevant model is the E3ZM-R66. Operating temperature is specified from -25 to 55°C, with storage from -40 to 70°C. Reversed power-supply polarity protection, output short-circuit protection, mutual-interference prevention, and reversed output-polarity protection are listed. SUS316, methacrylic resin, PES, PEEK, and fluoro rubber are among the supplied materials. Because the source provides two bracketed sensing values rather than one simplified distance, those figures are retained as stated. For a related pre-wired PNP model using 2 m cable connection, see E3ZM-R81 2M.