Omron E3Z-T61K-M3J 0.3M Photoelectric Sensor
The Omron E3Z-T61K-M3J 0.3M Photoelectric Sensor provides long-range through-beam detection by establishing an optical path between a separate emitter and receiver across distances up to 15 m. The sensing pair uses an 870 nm infrared LED, and objects are detected when they interrupt the transmitted beam between the two sensing elements. An NPN output communicates this detection state to compatible industrial control equipment, while Light-ON or Dark-ON operation can be selected according to the required control sequence. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 connector for machine integration. Built for long-range through-beam sensing, the E3Z-T61K-M3J forms part of the E3Z Series within the long-range through-beam sensor range available through Omron machine sensing.
| Brand | Omron |
| Product | Photoelectric Sensors |
| Model Number | E3Z-T61K-M3J 0.3M |
Omron E3Z-T61K-M3J 0.3M Photoelectric Sensor – Technical Specifications
| Specification | Value |
|---|---|
| Sensing Method | Through-beam |
| Sensing Distance | 15 m |
| Emitter Number | E3Z-T61K-L-M3J 2M |
| Receiver Number | E3Z-T61K-D-M3J 2M |
| Light Source | Infrared LED (870 nm) |
| Power Supply Voltage | 12 to 24 VDC |
| Output Configuration | NPN |
| Connection Method | Pre-wired M8 connector |
| Current Consumption | 35 mA max. (Emitter: 15 mA max., Receiver: 20 mA max.) |
| Operation Mode | Light-ON/Dark-ON |
| Response Time | Operate or reset: 1 ms max |
| Sensitivity Adjustment | One-turn adjuster |
| Ambient Illumination | Incandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max |
| Ambient Temperature Range | Operating: −25 to 55°C, Some connector models: −40°C to 55°C * (with no icing or condensation) Storage: −40 to 70°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 35% to 85%, Storage: 35% to 95% (with no condensation) |
| Insulation Resistance | 20 MΩ min. at 500 VDC |
| Dielectric Strength | 1,000 VAC, 50/60 Hz for 1 min |
| Vibration Resistance | Destruction: 10 to 55 Hz, 1.5 mm double amplitude for 2 hours each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 3 times each in X, Y, and Z directions |
| Protection Circuits | Reversed power supply polarity protection, Output short-circuit protection, and Reversed output polarity protection |
| Degree Of Protection | IEC, IP67 |
| Material | PBT (polybutylene terephthalate) |
| Weight | Approx. 50 g |
The Omron E3Z-T61K-M3J 0.3M Photoelectric Sensor uses through-beam sensing across a specified distance of 15 m. The sensing arrangement includes the E3Z-T61K-L-M3J emitter and E3Z-T61K-D-M3J receiver, with an 870 nm infrared LED establishing the optical beam between them. The NPN output communicates the switching state to compatible industrial control circuitry. The sensor operates from 12 to 24 VDC and consumes 35 mA maximum in total, with 15 mA maximum specified for the emitter and 20 mA maximum for the receiver. Light-ON or Dark-ON operation can be selected according to the required switching logic, while operate or reset time is 1 ms maximum. A one-turn adjuster supports setup, and a pre-wired M8 connector provides removable machine-side electrical connection.
For an Omron through-beam photoelectric sensor requiring NPN output, 15 m sensing, and M8 connection, the relevant model is the E3Z-T61K-M3J. Operating temperature is stated from -25 to 55°C under the supplied conditions, while storage extends from -40 to 70°C. Ambient-light resistance is specified at 3,000 lx for incandescent illumination and 10,000 lx for sunlight. Reversed power-supply polarity protection, output short-circuit protection, and reversed output-polarity protection are listed. PBT is specified as the housing material. For a related E3Z-T61K arrangement using conventional 2 m pre-wired cables, see E3Z-T61K 2M.
