Omron E3Z-T66A Photoelectric Sensor
Omron E3Z-T66A is a through-beam photoelectric sensor designed for object sensing across a specified distance of 10 m. The sensing arrangement uses the E3Z-T66-A-L emitter and E3Z-T66-A-D receiver, with a 660 nm red LED establishing the optical path between them. The NPN output communicates the switching state to compatible machine-control circuitry, while selectable Light-ON and Dark-ON operation supports different control requirements. The sensor operates from 12 to 24 VDC and uses M8 connectors for electrical integration. Total current consumption is specified at 35 mA maximum, while response time is 1 ms maximum. Within the E3Z Series, the E3Z-T66A provides connector wiring within the 10 m red LED through-beam sensor range across Omron Industrial Sensors.
| Brand | Omron |
| Product | Photoelectric Sensors |
| Model Number | E3Z-T66A |
Omron E3Z-T66A Photoelectric Sensor – Technical Specifications
| Specification | Value |
|---|---|
| Sensing Method | Through-beam |
| Sensing Distance | 10 m |
| Emitter Number | E3Z-T66-A-L |
| Receiver Number | E3Z-T66-A-D |
| Light Source | Red LED (660 nm) |
| Power Supply Voltage | 12 to 24 VDC |
| Output Configuration | NPN |
| Connection Method | M8 connector |
| Current Consumption | 35 mA max. (Emitter: 15 mA max., Receiver: 20 mA max.) |
| Operation Mode | Light-ON/Dark-ON |
| Response Time | Operate or reset: 1 ms max |
| Sensitivity Adjustment | One-turn adjuster |
| Ambient Illumination | Incandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max |
| Ambient Temperature Range | Operating: −25 to 55°C, Some connector models: −40°C to 55°C * (with no icing or condensation) Storage: −40 to 70°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 35% to 85%, Storage: 35% to 95% (with no condensation) |
| Insulation Resistance | 20 MΩ min. at 500 VDC |
| Dielectric Strength | 1,000 VAC, 50/60 Hz for 1 min |
| Vibration Resistance | Destruction: 10 to 55 Hz, 1.5 mm double amplitude for 2 hours each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 3 times each in X, Y, and Z directions |
| Protection Circuits | Reversed power supply polarity protection, Output short-circuit protection, and Reversed output polarity protection |
| Degree Of Protection | IEC, IP67 |
| Material | PBT (polybutylene terephthalate) |
| Weight | Approx. 30 g |
The Omron E3Z-T66A Photoelectric Sensor uses through-beam sensing across a specified distance of 10 m. The sensing arrangement includes the E3Z-T66-A-L emitter and E3Z-T66-A-D receiver, with a 660 nm red LED establishing the optical path between them. The NPN output communicates the switching state to compatible industrial control circuitry. The sensing pair operates from 12 to 24 VDC and consumes 35 mA maximum in total, with 15 mA maximum specified for the emitter and 20 mA maximum for the receiver. Light-ON or Dark-ON operation can be selected according to the required switching logic, while operate or reset time is 1 ms maximum. A one-turn adjuster supports setup, and M8 connectors provide removable electrical connection. Ambient-light limits are specified at 3,000 lx for incandescent illumination and 10,000 lx for sunlight.
For an Omron through-beam photoelectric sensor requiring NPN output, visible red light, 10 m sensing, and connector wiring, the relevant model is the E3Z-T66A. Operating temperature is stated from -25 to 55°C under the supplied conditions, while storage extends from -40 to 70°C. Operating humidity covers 35% to 85%, and insulation resistance is specified at 20 MΩ minimum at 500 VDC. Reversed power-supply polarity protection, output short-circuit protection, and reversed output-polarity protection are listed. PBT is specified as the housing material. For a related NPN connector model requiring a longer 30 m sensing distance, see E3Z-T67.
