Maintenance teams planning replacements for E3Z-G82-M3J frequently review Omron SMPS 24V 10A, E3Z D61 2M and Omron Sensors to prevent downtime, checking availability and compatibility with existing systems.
Omron E3Z-G82-M3J Photoelectric Sensor
The Omron E3Z-G82-M3J Photoelectric Sensor offers Grooved type, 25 mm Sensing distance, PNP Output, Pre-wired Connector (M8, 4 pins), Infrared LED (940 nm) Light source, 12 to 24 VDC Power supply voltage, Light-ON/Dark-ON selectable mode. Manufactured by Omron under the Omron Photoelectric Sensors category, this model belongs to the Omron E3Z Series.

| Brand | Omron |
| Product Type | Photoelectric Sensor |
| Model Number | E3Z-G82-M3J |
Omron E3Z-G82-M3J Photoelectric Sensor β Technical Specifications
| Specification | Value |
|---|---|
| Sensing Method | Grooved type |
| Sensing Distance | 25 mm |
| Standard Sensing Object | Opaque, 1.5-mm dia. min. |
| Light Source | Infrared LED (940 nm) |
| Power Supply Voltage | 12 to 24 VDC |
| Output configuration | PNP |
| Connection Method | Pre-wired Connector (M8, 4 pins) |
| Current Consumption | 40 mA max. |
| Control Output | Load power supply voltage: 26.4 VDC max. Load current: 100 mA max. (Residual voltage: 1 V max.) |
| Operation Mode | Light-ON/Dark-ON selectable |
| Response Time | Operate or reset: 1 ms max. |
| Indicators | Operation indicator (orange) |
| Ambient Illumination | Incandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max. |
| Ambient Temperature Range | Operating: β25 to 55Β°C, Storage: β40 to 70Β°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 35% to 85%, Storage: 35% to 95% (with no condensation) |
| Insulation Resistance | 20 MΞ© min. at 500 VDC between lead wires and case |
| Dielectric Strength | 1,000 VAC, 50/60 Hz for 1 min between lead wires and case |
| Vibration Resistance | Destruction: 10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 3 times each in X, Y, and Z directions |
| Protection Circuits | Reversed power supply polarity protection, Output short-circuit protection, and Mutual interference prevention |
| Degree of Protection | IP64 (IEC 60529) |
| Material | ABS (Acrylonitril Butadiene Styrene) |
| Weight | Approx. 30 g |
Built for exacting industrial detection needs, the Omron E3Z-G82-M3J Photoelectric Sensor uses a grooved sensing method to identify opaque targets as small as 1.5 mm. Its 25 mm fixed sensing distance ensures reliable operation in high-speed and narrow-space environments. The infrared LED (940 nm) provides robust and interference-resistant detection, while the PNP output configuration and Light-ON/Dark-ON selectable modes make it adaptable across different control systems and applications.
Engineered for simplified integration, this Photoelectric Sensor comes with a pre-wired M8, 4-pin connector that allows for quick, tool-free setup in automation cabinets or machines. With a low current consumption of 40 mA and 1 ms response time, it handles rapid detection tasks efficiently. An orange operation indicator ensures at-a-glance status checks, supporting continuous production flow with minimal manual inspection.
Constructed from rugged ABS material and rated IP64, the E3Z-G82-M3J is resilient in dusty and damp environments. The built-in reverse polarity protection, short-circuit protection, and mutual interference prevention enhance its longevity and safety in demanding applications. With an operating temperature range from β25Β°C to 55Β°C and vibration resistance up to 1.5 mm double amplitude, this Omron Photoelectric Sensor stands out as a reliable choice for assembly lines, packaging units, and high-precision automation stations.




