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Omron E3S-AT11 2M Photoelectric Sensor

Omron E3S-AT11 2M is an NPN through-beam photoelectric sensor with a horizontal design and built-in amplifier for object sensing across a distance of up to 7 m. Its 660 nm red LED establishes the optical path between separate emitter and receiver units, allowing the switching state to change when a target interrupts the beam. The sensor operates from 10 to 30 VDC and includes a 2 m pre-wired cable for electrical connection. Light-ON or Dark-ON operation can be selected, while a two-turn endless adjuster supports setup. Response time is specified at 0.5 ms. Within the E3S Series, the E3S-AT11 2M provides the pre-wired NPN option. Explore 7 m through-beam sensors across Omron Sensing Products.

Omron E3S-AT11 2M Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3S-AT11 2M

Omron E3S-AT11 2M Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodThrough-beam Sensors
Sensing Distance7 m
Standard Sensing ObjectOpaque: 10-mm dia. min.
Light SourceRed LED (660 nm)
Power Supply Voltage10 to 30 VDC, including ripple (p-p) 10%
Output ConfigurationNPN
Connection MethodPre-wired 2 M Cable
Current ConsumptionBoth Emitter and Receiver: 20 mA max. (plus approx. 15 mA with turbo function)
Control OutputLoad power supply voltage: 30 VDC max., Load current: 100 mA max. (residual voltage: 1 V max.)
Operation ModeLight-ON/Dark-ON selectable
Response TimeOperation or reset: 0.5 ms max.
Sensitivity AdjustmentTwo-turn endless adjuster with an indicator
Ambient IlluminationIncandescent lamp: 5,000 lx max. Sunlight: 10,000 lx max.
Ambient Temperature RangeOperating: −25°C to 55°C (with no icing or condensation) Storage: −40°C to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 35% to 85% (with no condensation) Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC between current-carrying parts and case
Dielectric Strength1,000 VAC, 50/60 Hz for 1 min. between current-carrying parts and case
Vibration Resistance10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions
Shock ResistanceDestruction: 500m/s2, 3 times each in X, Y, and Z directions
Protection CircuitsPower supply reverse polarity protection, Output short-circuit protection
Degree Of ProtectionIEC IP67; NEMA: 4X (indoors only)
MaterialPBT, Denatured polyallylate, Stainless steel (SUS304)
WeightApprox. 150 g

The Omron E3S-AT11 2M Photoelectric Sensor uses through-beam sensing with a horizontal design and built-in amplifier across a maximum distance of 7 m. A 660 nm red LED establishes the optical path between separate emitter and receiver units, and an object changes the NPN output state when it interrupts the beam. The sensor operates from 10 to 30 VDC and includes a 2 m pre-wired cable. Both emitter and receiver consume up to 20 mA, with approximately 15 mA additional consumption when turbo mode is active. Load current is rated up to 100 mA with a maximum load supply voltage of 30 VDC. Light-ON or Dark-ON operation can be selected, while a two-turn endless adjuster supports setup. Operation or reset time is specified at 0.5 ms maximum.

For an Omron NPN through beam photoelectric sensor requiring 7 m sensing and fixed cable wiring, the corresponding model is the E3S-AT11. The stated sensing target is an opaque object with a minimum diameter of 10 mm. Ambient-light resistance reaches 5,000 lx under incandescent light and 10,000 lx under sunlight. Operating temperature extends from -25 to 55°C, while storage ranges from -40 to 70°C without icing or condensation. Power-supply reverse polarity and output short-circuit protection are listed. Its specification also suits searches for an Omron 7 m NPN sensor and Omron pre wired through beam sensor. For an E3S NPN through-beam version using an M12 connector instead of the fixed cable, see E3S-AT16.