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Omron E3S-AT66 Photoelectric Sensor

Omron E3S-AT66 is an NPN through-beam photoelectric sensor with a vertical design and built-in amplifier for sensing objects across a distance of up to 7 m. Its 660 nm red LED establishes the optical path between separate emitter and receiver units, while the NPN output transfers the switching state to compatible machine-control equipment. The sensor operates from 10 to 30 VDC and uses an M12 connector for detachable electrical connection. Light-ON or Dark-ON operation can be selected, while a two-turn endless adjuster supports sensitivity setup. Both emitter and receiver consume up to 20 mA, and response time is specified at 0.5 ms. Within the E3S Series, the E3S-AT66 provides the vertical NPN connector configuration. Explore long-range through-beam sensors across Omron Sensing Range.

Omron E3S-AT66 Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3S-AT66

Omron E3S-AT66 Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodThrough-beam Sensors
Sensing Distance7 m
Standard Sensing ObjectOpaque: 10-mm dia. min.
Light SourceRed LED (660 nm)
Power Supply Voltage10 to 30 VDC, including ripple (p-p) 10%
Output ConfigurationNPN
Connection MethodConnector (M12)
Current ConsumptionBoth Emitter and Receiver: 20 mA max. (plus approx. 15 mA with turbo function)
Control OutputLoad power supply voltage: 30 VDC max., Load current: 100 mA max. (residual voltage: 1 V max.)
Operation ModeLight-ON/Dark-ON selectable
Response TimeOperation or reset: 0.5 ms max.
Sensitivity AdjustmentTwo-turn endless adjuster with an indicator
Ambient IlluminationIncandescent lamp: 5,000 lx max. Sunlight: 10,000 lx max.
Ambient Temperature RangeOperating: −25°C to 55°C (with no icing or condensation) Storage: −40°C to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 35% to 85% (with no condensation) Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC between current-carrying parts and case
Dielectric Strength1,000 VAC, 50/60 Hz for 1 min. between current-carrying parts and case
Vibration Resistance10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions
Shock ResistanceDestruction: 500m/s2, 3 times each in X, Y, and Z directions
Protection CircuitsPower supply reverse polarity protection, Output short-circuit protection
Degree Of ProtectionIEC IP67; NEMA: 4X (indoors only)
MaterialPBT, Denatured polyallylate, Stainless steel (SUS304)
WeightApprox. 70 g

The Omron E3S-AT66 Photoelectric Sensor uses through-beam sensing with a vertical design and built-in amplifier across a maximum distance of 7 m. A 660 nm red LED establishes the optical path between separate emitter and receiver units, and the NPN output changes state when an object interrupts the beam. The sensor operates from 10 to 30 VDC and uses an M12 connector for detachable electrical connection. Both emitter and receiver consume up to 20 mA, with approximately 15 mA additional consumption when turbo mode is active. Load current is rated up to 100 mA, with load supply voltage up to 30 VDC. Light-ON or Dark-ON operation can be selected, and a two-turn endless adjuster supports sensitivity setting. Response time is specified at 0.5 ms maximum.

For an Omron NPN through beam photoelectric sensor requiring vertical installation, 7 m sensing, and M12 connection, the corresponding model is the E3S-AT66. The stated target is an opaque object with a minimum diameter of 10 mm. Ambient-light resistance reaches 5,000 lx under incandescent light and 10,000 lx under sunlight. Operating temperature extends from -25 to 55°C, while storage ranges from -40 to 70°C. Power-supply reverse polarity and output short-circuit protection are listed. Its specification also suits searches for an Omron vertical M12 sensor and Omron NPN long range sensor. For an E3S PNP through-beam configuration using M12 connection and the same 7 m sensing distance, see E3S-AT86.