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Omron E3JM-10M4T-NN Photoelectric Sensor

Omron E3JM-10M4T-NN is a through-beam photoelectric sensor designed for sensing across a distance of up to 10 m with a 950 nm infrared LED. Separate transmitting and receiving units establish the optical path, while an SPDT relay provides the switching interface for compatible control circuits. The sensor accepts 12 to 240 VDC or 24 to 240 VAC at 50/60 Hz and uses terminal-block wiring. Light-ON or Dark-ON operation can be selected, while an adjustable delay from 0.1 to 5 seconds provides additional timing control. The E3JM-10M4T-NN belongs to the E3JM Series. Related models can be explored under 10 m through-beam sensors across the wider range available from Omron Photoelectric Sensors.

Omron E3JM-10M4T-NN Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3JM-10M4T-NN

Omron E3JM-10M4T-NN Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodThroughbeam (Emitter + Receiver)
Sensing Distance10 m
Standard Sensing ObjectOpaque: 14.8-mm dia. min
Light SourceInfrared LED (950 nm)
Power Supply Voltage12 to 240 VDC, ripple (p-p): 10% max. 24 to 240 VAC, 50/60 Hz
Output ConfigurationRelay
Connection MethodTerminal block
Control OutputSPDT, 250 VAC, 3A (cosφ=1) max., 5 VDC, 10 mA min.
Operation ModeLight-ON Dark-ON (switch selectable)
Response TimeOperate or reset: 30 ms max.
Timer FunctionDelay time: 0.1 to 5 s (adjustable)
Ambient IlluminationIncandescent lamp: 3,000 lx max.
Ambient Temperature RangeOperating: −25°C to 55°C, Storage: −30°C to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 45% to 85% (with no condensation), Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC
Dielectric Strength2,000 VAC, 50/60 Hz for 1 min.
Vibration Resistance10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions
Shock Resistance500 m/s2 3 times each in X, Y, and Z directions, 100 m/s2 3 times each in X, Y, and Z directions
Degree Of ProtectionIEC 60529: IP66
MaterialABS (Acrylonitril Butadiene Styrene), Methacrylic resin, Polycarbonate, Iron
WeightApprox. 270 g

The Omron E3JM-10M4T-NN Photoelectric Sensor provides through-beam sensing up to 10 m using a 950 nm infrared LED and SPDT relay output. Separate transmitting and receiving units establish the optical path, and the relay changes state when an object interrupts the beam. The sensor accepts 12 to 240 VDC or 24 to 240 VAC at 50/60 Hz, allowing connection across different machine-control voltage systems. Power consumption is specified at 3 W max., with 1 W max. for the emitter and 2 W max. for the receiver. Light-ON or Dark-ON operation can be selected according to the required switching sequence. An adjustable delay from 0.1 to 5 seconds provides timing control, while operate or reset time is specified at 30 ms max. The SPDT relay supports up to 3 A at 250 VAC under the stated resistive-load condition, and terminal-block wiring provides the electrical interface.

For an Omron timer through beam photoelectric sensor requiring 10 m sensing and broad AC/DC supply compatibility, the corresponding model is the E3JM-10M4T-NN. Its adjustable delay differentiates it from standard 10 m relay versions while retaining infrared sensing and multi-voltage operation. The specification also suits searches for an Omron 10 m relay sensor and Omron AC DC through beam sensor. Operating temperature extends from -25 to 55°C, and the specified sensing target is an opaque object with a minimum diameter of 14.8 mm. For a related E3JM 10 m through-beam relay model without the adjustable T-version delay format, see E3JM-10M4-NN.