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Omron E3JM-10M4-G-N Photoelectric Sensor

Omron E3JM-10M4-G-N is a through-beam photoelectric sensor designed for sensing across a distance of up to 10 m using a 950 nm infrared LED. Separate transmitting and receiving units establish the optical path, while an SPDT relay output supports compatible control circuits. The sensor accepts 12 to 240 VDC and 24 to 240 VAC at 50/60 Hz and uses a terminal block for electrical connection. Light-ON or Dark-ON operation can be selected according to the required switching sequence. Response time is specified at 30 ms max., while power consumption is 3 W max. The E3JM-10M4-G-N belongs to the E3JM Series. Related long-range models can be explored under 10 m through-beam sensors across the wider sensing range from Omron Sensor Products.

Omron E3JM-10M4-G-N Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3JM-10M4-G-N

Omron E3JM-10M4-G-N Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodThroughbeam
Sensing Distance10 m
Standard Sensing ObjectOpaque: 14.8-mm dia. min
Light SourceInfrared LED (950 nm)
Power Supply Voltage12 to 240 VDC±10%, ripple (p-p): 10% max. 24 to 240 VAC±10%, 50/60 Hz
Output ConfigurationRelay
Connection MethodTerminal block
Control OutputSPDT, 250 VAC, 3A (cosφ=1) max., 5 VDC, 10 mA min.
Operation ModeLight-ON/Dark-ON selectable
Response TimeOperate or reset: 30 ms max.
Ambient IlluminationIncandescent lamp: 3,000 lx max.
Ambient Temperature RangeOperating: −25°C to 55°C, Storage: −30°C to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 45% to 85% (with no condensation), Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC
Dielectric Strength2,000 VAC, 50/60 Hz for 1 min.
Vibration Resistance10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions
Shock Resistance500 m/s2 3 times each in X, Y, and Z directions, 100 m/s2 3 times each in X, Y, and Z directions
Degree Of ProtectionIEC 60529: IP66
MaterialABS (Acrylonitril Butadiene Styrene), Methacrylic resin, Polycarbonate, Iron
WeightApprox. 270 g

The Omron E3JM-10M4-G-N Photoelectric Sensor provides through-beam sensing up to 10 m using a 950 nm infrared LED and SPDT relay output. Separate transmitting and receiving units establish the optical path, while the relay changes state when an object interrupts the beam. The sensor accepts 12 to 240 VDC and 24 to 240 VAC at 50/60 Hz, supporting a broad range of industrial power systems. A terminal block provides secure electrical connection. Power consumption is 3 W max., divided as 1 W max. for the emitter and 2 W max. for the receiver. Light-ON or Dark-ON operation can be selected according to the required switching sequence. Operate or reset time is specified at 30 ms max., while the SPDT relay supports up to 3 A at 250 VAC under the stated resistive-load condition.

For an Omron 10 m through beam photoelectric sensor requiring relay output and wide AC/DC supply compatibility, the corresponding model is the E3JM-10M4-G-N. Its infrared optical source supports long sensing distances, while the terminal-block interface provides serviceable machine wiring. The specification also suits searches for an Omron SPDT relay sensor and Omron multi voltage photoelectric sensor. Operating temperature extends from -25 to 55°C, while an opaque object of 14.8 mm diameter minimum is specified as the sensing target. For a related E3JM 10 m model with timer functions, see E3JM-10M4-G-NN.