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Omron EE-SX671 Photomicrosensor

Omron EE-SX671 is an L-shaped through-beam photomicrosensor designed around a fixed 5 mm sensing slot. An infrared LED provides the optical source across the opening, while the integrated transmitting and receiving sections define the sensing point within the L-shaped body. The sensor operates from 5 to 24 VDC and provides an NPN output with selectable Dark-ON or Light-ON switching. Current consumption is specified at 12 mA maximum, while a 4-pole connector provides the electrical interface. Load short-circuit protection supports the output circuit, and fluorescent-light resistance is specified up to 1,000 lx at the receiver surface. The EE-SX671 provides an L-shaped mounting format within the 5 mm slot sensor range across Omron L-Shaped Sensor Products.

Omron EE-SX671 Photomicro Sensors
BrandOmron
ProductPhotomicro Sensors
Model NumberEE-SX671

Omron EE-SX671 Photomicrosensor – Technical Specifications

SpecificationValue
AppearanceL-shaped
Sensing MethodThroughbeam with slot
Sensing Distance5 mm
Light SourceInfrared LED
Power Supply Voltage5 to 24 VDC
Output ConfigurationNPN
Connection MethodConnector (4 poles)
Current Consumption12 mA max.
Operation ModeDark-ON/ Light-ON (selectable)
IndicatorsIncident light
Ambient Illumination1,000 lx max. with fluorescent light on the surface of the receiver
Ambient Temperature RangeOperating: −25 to +55°C, Storage: −30 to +80°C (with no icing or condensation)
Ambient Humidity RangeOperating: 5% to 85%, Storage: 5% to 95% (with no icing or condensation)
Vibration ResistanceDestruction: 20 to 2,000 Hz (peak acceleration: 100 m/s2) 1.5-mm double amplitude for 2 h (4-min periods) each in X, Y, and Z directions
Shock ResistanceDestruction: 500 m/s2 for 3 times each in X, Y, and Z directions
Protection CircuitsLoad short circuit protection
Degree Of ProtectionIEC60529 IP50
MaterialPolybutylene phthalate (PBT)

The Omron EE-SX671 Photomicrosensor uses an L-shaped structure with a built-in through-beam optical path across a fixed 5 mm sensing slot. An infrared LED provides the optical source, while the integrated sensing sections maintain the path across the opening inside the sensor body. The model operates from 5 to 24 VDC and provides an NPN output with selectable Dark-ON or Light-ON switching. Current consumption is specified at 12 mA max. A 4-pole connector provides electrical connection, while load short-circuit protection is included. Fluorescent-light resistance is specified up to 1,000 lx at the receiver surface under the stated condition. The L-shaped layout gives this model a different mounting geometry from the standard EE-SX670 while retaining the same 5 mm sensing slot.

The EE-SX671 uses PBT as the stated housing material and operates from -25°C to 55°C. Storage temperature extends from -30°C to 80°C without icing or condensation. Its mechanical specifications include vibration from 20 to 2,000 Hz with peak acceleration of 100 m/s² and 1.5 mm double amplitude during the specified test cycle. Shock resistance is stated at 500 m/s² three times along each X, Y, and Z direction, while the enclosure carries an IP50 rating. The L-shaped body, NPN output, selectable switching operation, and 4-pole connector suit compact mechanisms requiring a different mounting orientation. For a related L-shaped NPN version supplied with a 1 m pre-wired cable, see the Omron EE-SX671-WR 1M.