Omron EE-SX670P Photomicrosensor
Omron EE-SX670P is a through-beam slot photomicrosensor designed with a fixed 5 mm sensing gap and PNP output. Its integrated transmitting and receiving sections establish a non-modulated optical path across the opening, allowing the output state to change when a target moves through the slot. Dark-ON and Light-ON operation can be selected according to the required switching logic, while operating power is supplied from 5 to 24 VDC. Current consumption is specified at 12 mA with the L terminal open, and the output supports a maximum load current of 50 mA. A red indicator supplies visual operating feedback, while a 4-pole connector provides the electrical interface. The EE-SX670P provides PNP switching within the 5 mm slot photomicrosensor range across Omron PNP Sensor Products.
| Brand | Omron |
| Product | Photomicro Sensors |
| Model Number | EE-SX670P |
Omron EE-SX670P Photomicrosensor – Technical Specifications
| Specification | Value |
|---|---|
| Type | Standard |
| Sensing Method | Throughbeam with slot |
| Sensing Distance | 5 mm |
| Power Supply Voltage | 5 to 24 VDC |
| Control Output (Output Type) | PNP |
| Connection Method | Connector (4 poles) |
| Current Consumption | 12 mA (L terminal open) |
| Operation Mode | Dark-ON/Light-ON |
| Control Output (Residual Voltage) | at 50 mA load current: 1.3 V max. |
| Control Output (Load Current) | 50 mA max. |
| Indicator | Light indicator (red) |
| Luminous Method | Non-modulated |
| Ambient Temperature (Operating) | -25 to 55 ℃ (with no freezing or condensation) |
| Ambient Temperature (Storage) | -30 to 80 ℃ (with no freezing or condensation) |
| Ambient Humidity (Operating) | 5 to 85 % (with no condensation) |
| Ambient Humidity (Storage) | 5 to 95 % (with no condensation) |
| Vibration Resistance | Destruction: 20 to 2000 Hz, peak acceleration 100 m/s2, 1.5-mm double amplitude 2 h each in X, Y, and Z directions (4 min periods) |
| Shock Resistance | Destruction: 500 m/s2 for 3 times each in X, Y, and Z directions |
| Degree Of Protection | IP50 |
| Material | Case: Polybutylene terephthalate (PBT) Emitter/Receiver Cover: Polycarbonate (PC) |
The Omron EE-SX670P Photomicrosensor uses a built-in through-beam sensing arrangement across a fixed 5 mm slot. The optical sections are incorporated within the sensor body, establishing a defined sensing path across the opening for machine components passing through the slot. The unit operates from 5 to 24 VDC and provides a PNP output with selectable Dark-ON or Light-ON operation. Current consumption is specified at 12 mA with the L terminal open, while the output supports a maximum load current of 50 mA. Residual voltage is listed as 1.3 V max. at a 50 mA load. A red light indicator provides visual operating status, and the optical signal is non-modulated. Electrical connection is provided through a 4-pole connector, supporting installation where detachable connector wiring is preferred.
The EE-SX670P uses a PBT case with polycarbonate emitter and receiver covers and operates from -25°C to 55°C. Storage extends from -30°C to 80°C without freezing or condensation. Its stated vibration resistance covers 20 to 2,000 Hz with peak acceleration of 100 m/s² and 1.5 mm double amplitude during the defined test cycle. Shock resistance is specified at 500 m/s² three times in each X, Y, and Z direction, and the enclosure carries an IP50 rating. The PNP output distinguishes this configuration from NPN EE-SX670 variants while retaining the same 5 mm slot and selectable operating logic. For a related PNP version supplied with a 1 m pre-wired cable, see the Omron EE-SX670P-WR 1M.
