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Omron E3Z-T61 2M Photoelectric Sensor

The Omron E3Z-T61 2M Photoelectric Sensor uses separate emitter and receiver units to establish a through-beam sensing path of up to 15 m. The E3Z-T61-L 2M emitter uses an 870 nm infrared LED to transmit light toward the E3Z-T61-D 2M receiver, and an object is detected when it interrupts this optical path. The NPN output provides the resulting detection state to compatible machine-control equipment, with Light-ON or Dark-ON operation selectable according to the required control logic. The sensor operates from 12 to 24 VDC, while 2 m pre-wired cables support installation and connection. The E3Z-T61 represents a 15 m through-beam option in the E3Z Series and connects with the 15 m through-beam sensor range developed for machine detection by Omron sensing products.

Omron E3Z-T61 2M Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3Z-T61 2M

Omron E3Z-T61 2M Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodThrough-beam
Sensing Distance15 m
Emitter NumberE3Z-T61-L 2M
Receiver NumberE3Z-T61-D 2M
Light SourceInfrared LED (870 nm)
Power Supply Voltage12 to 24 VDC
Output ConfigurationNPN
Connection MethodPre Wired, Cable Length 2M
Current Consumption35 mA max. (Emitter: 15 mA max., Receiver: 20 mA max.)
Operation ModeLight-ON/Dark-ON
Response TimeOperate or reset: 1 ms max.
Sensitivity AdjustmentOne-turn adjuster
Ambient IlluminationIncandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max
Ambient Temperature RangeOperating: −25 to 55°C, Some connector models: −40°C to 55°C * (with no icing or condensation) Storage: −40 to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 35% to 85%, Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC
Dielectric Strength1,000 VAC, 50/60 Hz for 1 min
Vibration ResistanceDestruction: 10 to 55 Hz, 1.5 mm double amplitude for 2 hours each in X, Y, and Z directions
Shock ResistanceDestruction: 500 m/s2 3 times each in X, Y, and Z directions
Protection CircuitsReversed power supply polarity protection, Output short-circuit protection, and Reversed output polarity protection
Degree Of ProtectionIEC, IP67
MaterialPBT (polybutylene terephthalate)
WeightApprox. 120 g

The Omron E3Z-T61 2M Photoelectric Sensor uses through-beam sensing across a specified distance of 15 m. The optical arrangement includes the E3Z-T61-L emitter and E3Z-T61-D receiver, with an 870 nm infrared LED establishing the beam between them. The NPN output communicates the switching state to compatible industrial control circuitry. The sensor operates from 12 to 24 VDC and consumes 35 mA maximum in total, with 15 mA maximum specified for the emitter and 20 mA maximum for the receiver. Light-ON or Dark-ON operation can be selected according to the required control logic, while operate or reset time is 1 ms maximum. A one-turn adjuster supports setup, and 2 m pre-wired cables provide fixed electrical connection. Ambient-light limits are specified at 3,000 lx for incandescent illumination and 10,000 lx for sunlight.

For an Omron through-beam photoelectric sensor requiring NPN output, 15 m sensing, and 2 m fixed wiring, the relevant model is the E3Z-T61. Operating temperature is stated from -25 to 55°C under the supplied conditions, while storage extends from -40 to 70°C. Reversed power-supply polarity protection, output short-circuit protection, and reversed output-polarity protection are specified. PBT is listed as the housing material. Its separate emitter and receiver arrangement establishes a defined optical path across the stated distance. For the same model with longer 5 m pre-wired cables, see E3Z-T61 5M.