Omron E3Z-G81-M3J 0.3M Photoelectric Sensor
Omron E3Z-G81-M3J 0.3M is a grooved through-beam photoelectric sensor designed around a fixed 25 mm sensing path. Its 940 nm infrared LED establishes the optical beam across the groove, allowing a target to change the sensing state when it interrupts the light path. The PNP output communicates this state to compatible machine-control circuitry, while Light-ON or Dark-ON operation can be selected according to the required logic. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 connector arrangement. Current consumption is specified at 25 mA maximum, while response time is 1 ms maximum. Within the E3Z Series, the E3Z-G81-M3J 0.3M provides compact PNP sensing for grooved photoelectric sensors across Omron Sensors.
| Brand | Omron |
| Product | Photoelectric Sensors |
| Model Number | E3Z-G81-M3J 0.3M |
Omron E3Z-G81-M3J 0.3M Photoelectric Sensor – Technical Specifications
| Specification | Value |
|---|---|
| Appearance | Grooved Type |
| Sensing Method | Through-beam |
| Sensing Distance | 25 mm |
| Light Source | Infrared LED (940 nm) |
| Power Supply Voltage | 12 to 24 VDC |
| Output Configuration | PNP |
| Connection Method | Pre-wired Connector M8 |
| Current Consumption | 25 mA max. |
| Operation Mode | Light-ON/Dark-ON |
| Response Time | Operate or reset: 1 ms max. |
| Sensitivity Adjustment | One-turn adjuster |
| Ambient Illumination | Incandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max |
| Ambient Temperature Range | Operating: −25 to 55°C, Some connector models: −40°C to 55°C * (with no icing or condensation) Storage: −40 to 70°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 35% to 85%, Storage: 35% to 95% (with no condensation) |
| Insulation Resistance | 20 MΩ min. at 500 VDC |
| Dielectric Strength | 1,000 VAC, 50/60 Hz for 1 min |
| Vibration Resistance | Destruction: 10 to 55 Hz, 1.5 mm double amplitude for 2 hours each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 3 times each in X, Y, and Z directions |
| Protection Circuits | Reversed power supply polarity protection, Output short-circuit protection, and Mutual interference prevention |
| Degree Of Protection | IP64 (IEC 60529) |
| Material | ABS (Acrylonitril Butadiene Styrene) |
| Weight | Approx. 30 g |
The Omron E3Z-G81-M3J 0.3M Photoelectric Sensor uses a grooved through-beam arrangement with a fixed 25 mm optical path. Its 940 nm infrared LED establishes the beam between the opposing sensing elements inside the groove, while interruption by a target creates the switching condition. The PNP output communicates this state to compatible machine-control equipment, while Light-ON or Dark-ON operation can be selected according to the required sequence. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 connector. Current consumption is specified at 25 mA maximum, response time at 1 ms maximum, and a one-turn adjuster supports sensitivity setting. Ambient-light resistance reaches 3,000 lx under incandescent light and 10,000 lx under sunlight.
For an Omron grooved sensor requiring PNP output, a fixed 25 mm sensing gap, and compact M8 wiring, the relevant model is the E3Z-G81-M3J. Operating temperature extends from -25 to 55°C, while storage covers -40 to 70°C without icing or condensation. Reverse supply polarity, output short-circuit, and mutual-interference protection are included. ABS is listed as the housing material, while IP64 enclosure protection is stated. The integrated groove provides a predefined sensing position without the alignment work associated with separately mounted optical elements. Its specification also matches searches for an Omron PNP slot sensor and Omron M8 grooved photoelectric sensor. For a related PNP grooved model with a 2 m pre-wired cable, see the E3Z-G81 2M.
