Omron E3Z-G82-M3J 0.3M Photoelectric Sensor
Omron E3Z-G82-M3J 0.3M is a grooved through-beam photoelectric sensor with a fixed 25 mm optical path. The emitter and receiver are positioned across the groove within the same sensing structure, providing a predefined path for targets moving through the slot. Its 940 nm infrared LED supplies the sensing light, while the PNP output communicates the switching state to compatible industrial control circuitry. Light-ON or Dark-ON operation can be selected according to the required logic. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 connector. Current consumption is specified at 40 mA maximum, and response time is 1 ms maximum. Within the E3Z Series, the E3Z-G82-M3J 0.3M provides compact PNP wiring for M8 grooved sensors across Omron Sensing Products.
| Brand | Omron |
| Product | Photoelectric Sensors |
| Model Number | E3Z-G82-M3J 0.3M |
Omron E3Z-G82-M3J 0.3M Photoelectric Sensor – Technical Specifications
| Specification | Value |
|---|---|
| Appearance | Grooved Type |
| Sensing Method | Through-beam |
| Sensing Distance | 25 mm |
| Light Source | Infrared LED (940 nm) |
| Power Supply Voltage | 12 to 24 VDC |
| Output Configuration | PNP |
| Connection Method | Pre-wired Connector M8 |
| Current Consumption | 40 mA max. |
| Operation Mode | Light-ON/Dark-ON |
| Response Time | Operate or reset: 1 ms max. |
| Sensitivity Adjustment | One-turn adjuster |
| Ambient Illumination | Incandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max |
| Ambient Temperature Range | Operating: −25 to 55°C, Some connector models: −40°C to 55°C * (with no icing or condensation) Storage: −40 to 70°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 35% to 85%, Storage: 35% to 95% (with no condensation) |
| Insulation Resistance | 20 MΩ min. at 500 VDC |
| Dielectric Strength | 1,000 VAC, 50/60 Hz for 1 min |
| Vibration Resistance | Destruction: 10 to 55 Hz, 1.5 mm double amplitude for 2 hours each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 3 times each in X, Y, and Z directions |
| Protection Circuits | Reversed power supply polarity protection, Output short-circuit protection, and Mutual interference prevention |
| Degree Of Protection | IP64 (IEC 60529) |
| Material | ABS (Acrylonitril Butadiene Styrene) |
| Weight | Approx. 30 g |
The Omron E3Z-G82-M3J 0.3M Photoelectric Sensor uses a grooved through-beam arrangement with a fixed 25 mm sensing path. The optical elements are positioned across the groove within the same body, providing a predefined beam path for targets moving through the slot. Its 940 nm infrared LED supplies the sensing light, while the PNP output transfers the switching state to compatible industrial control equipment. Light-ON or Dark-ON operation can be selected according to the required logic. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 connector. Current consumption is specified at 40 mA maximum, response time at 1 ms maximum, and a one-turn adjuster supports sensitivity setting.
For an Omron grooved sensor requiring PNP output, integrated optics, and compact M8 wiring, the relevant model is the E3Z-G82-M3J. Ambient-light resistance reaches 3,000 lx under incandescent light and 10,000 lx under sunlight. Operating temperature extends from -25 to 55°C, while storage covers -40 to 70°C without icing or condensation. Reverse supply polarity, output short-circuit, and mutual-interference protection are included. ABS is listed as the housing material, while IP64 enclosure protection is stated. The fixed slot supports repeatable part sensing without separate optical alignment. Its specification also suits searches for an Omron PNP grooved sensor and Omron M8 slot sensor. For a related E3Z-G82 version using a 2 m pre-wired cable, see the E3Z-G82 2M.
