Omron E3Z-G81-M3J Photoelectric Sensor
Omron E3Z-G81-M3J is a grooved photoelectric sensor designed around a fixed 25 mm sensing gap for opaque targets as small as 1.5 mm in diameter. Its 940 nm infrared LED establishes the optical path across the groove, while the PNP output transfers the switching state to compatible industrial control circuitry. Light-ON or Dark-ON operation can be selected according to the required machine logic. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 4-pin connector for electrical integration. Current consumption is specified at 25 mA maximum, while response time is 1 ms maximum. Within the E3Z Series, the E3Z-G81-M3J provides connector-based PNP sensing within the grooved photoelectric sensor range across Omron Sensors.
| Brand | Omron |
| Product | Photoelectric Sensors |
| Model Number | E3Z-G81-M3J |
Omron E3Z-G81-M3J Photoelectric Sensor – Technical Specifications
| Specification | Value |
|---|---|
| Sensing Method | Grooved type |
| Sensing Distance | 25 mm |
| Standard Sensing Object | Opaque, 1.5-mm dia. min. |
| Light Source | Infrared LED (940 nm) |
| Power Supply Voltage | 12 to 24 VDC |
| Output Configuration | PNP |
| Connection Method | Pre-wired Connector (M8, 4 pins) |
| Current Consumption | 25 mA max. |
| Control Output | Load power supply voltage: 26.4 VDC max. Load current: 100 mA max. (Residual voltage: 1 V max.) |
| Operation Mode | Light-ON/Dark-ON selectable |
| Response Time | Operate or reset: 1 ms max. |
| Indicators | Operation indicator (orange) |
| Ambient Illumination | Incandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max. |
| Ambient Temperature Range | Operating: −25 to 55°C, Storage: −40 to 70°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 35% to 85%, Storage: 35% to 95% (with no condensation) |
| Insulation Resistance | 20 MΩ min. at 500 VDC between lead wires and case |
| Dielectric Strength | 1,000 VAC, 50/60 Hz for 1 min between lead wires and case |
| Vibration Resistance | Destruction: 10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 3 times each in X, Y, and Z directions |
| Protection Circuits | Reversed power supply polarity protection, Output short-circuit protection, and Mutual interference prevention |
| Degree Of Protection | IP64 (IEC 60529) |
| Material | ABS (Acrylonitril Butadiene Styrene) |
| Weight | Approx. 30 g |
The Omron E3Z-G81-M3J Photoelectric Sensor uses a grooved sensing arrangement with a fixed 25 mm gap for opaque targets as small as 1.5 mm in diameter. Its 940 nm infrared LED establishes the optical path across the groove, while interruption by a target creates the switching condition. The PNP output supports a load supply voltage up to 26.4 VDC and a load current up to 100 mA. Light-ON or Dark-ON operation can be selected according to the required control logic. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 4-pin connector for electrical integration. Current consumption is specified at 25 mA maximum, while operate or reset time is 1 ms maximum. An orange operation indicator provides visual switching status during use.
For an Omron grooved photoelectric sensor requiring PNP output, a fixed 25 mm sensing gap, and compact M8 wiring, the relevant model is the E3Z-G81-M3J. Ambient-light resistance is specified at 3,000 lx under incandescent light and 10,000 lx under sunlight. Operating temperature extends from -25 to 55°C, while storage covers -40 to 70°C without icing or condensation. Reverse supply polarity, output short-circuit, and mutual-interference protection are included. ABS is listed as the housing material, while IP64 enclosure protection is specified. The fixed groove supports repeatable small-part sensing without separate optical alignment. Its specification also matches searches for an Omron PNP slot sensor and Omron M8 grooved photoelectric sensor. For a related PNP grooved model with a 2 m pre-wired cable, see the E3Z-G81 2M.
