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Omron E3S-AT86 Photoelectric Sensor

Omron E3S-AT86 is a PNP through-beam photoelectric sensor with a built-in amplifier for object sensing across a distance of up to 7 m. A 660 nm red LED creates the optical path between separate emitter and receiver units, allowing the PNP output to change state when a target interrupts the beam. The sensor operates from 10 to 30 VDC and uses an M12 connector for detachable wiring. Light-ON or Dark-ON operation can be selected according to the required machine logic, while a two-turn endless adjuster supports sensitivity setup. Both emitter and receiver consume up to 20 mA, and response time is specified at 0.5 ms. Within the E3S Series, the E3S-AT86 provides the PNP connector option. Explore 7 m PNP through-beam sensors across Omron Industrial Sensing Products.

Omron E3S-AT86 Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3S-AT86

Omron E3S-AT86 Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodThrough-beam Sensors
Sensing Distance7 m
Standard Sensing ObjectOpaque: 10-mm dia. min.
Light SourceRed LED (660 nm)
Power Supply Voltage10 to 30 VDC, including ripple (p-p) 10%
Output ConfigurationPNP
Connection MethodConnector (M12)
Current ConsumptionBoth Emitter and Receiver: 20 mA max. (plus approx. 15 mA with turbo function)
Control OutputLoad power supply voltage: 30 VDC max., Load current: 100 mA max. (residual voltage: 1 V max.)
Operation ModeLight-ON/Dark-ON selectable
Response TimeOperation or reset: 0.5 ms max.
Sensitivity AdjustmentTwo-turn endless adjuster with an indicator
Ambient IlluminationIncandescent lamp: 5,000 lx max. Sunlight: 10,000 lx max.
Ambient Temperature RangeOperating: −25°C to 55°C (with no icing or condensation) Storage: −40°C to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 35% to 85% (with no condensation) Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC between current-carrying parts and case
Dielectric Strength1,000 VAC, 50/60 Hz for 1 min. between current-carrying parts and case
Vibration Resistance10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions
Shock ResistanceDestruction: 500m/s2, 3 times each in X, Y, and Z directions
Protection CircuitsPower supply reverse polarity protection, Output short-circuit protection
Degree Of ProtectionIEC IP67; NEMA: 4X (indoors only)
MaterialPBT, Denatured polyallylate, Stainless steel (SUS304)
WeightApprox. 70 g

The Omron E3S-AT86 Photoelectric Sensor uses through-beam sensing with a built-in amplifier across a maximum distance of 7 m. Its 660 nm red LED establishes the optical path between separate emitter and receiver units, while the PNP output changes state when an object interrupts the beam. The sensor operates from 10 to 30 VDC and uses an M12 connector for detachable wiring. Both emitter and receiver consume up to 20 mA, with approximately 15 mA additional consumption when turbo mode is active. Load current is rated up to 100 mA with maximum load supply voltage of 30 VDC. Light-ON or Dark-ON operation can be selected according to the required control logic, while a two-turn endless adjuster supports sensitivity setup. Response time is specified at 0.5 ms maximum.

For an Omron PNP through beam photoelectric sensor requiring a 7 m sensing distance and M12 connection, the relevant model is the E3S-AT86. The stated sensing target is an opaque object with a minimum diameter of 10 mm. Ambient-light resistance reaches 5,000 lx under incandescent light and 10,000 lx under sunlight. Operating temperature extends from -25 to 55°C, while storage ranges from -40 to 70°C without icing or condensation. Power-supply reverse polarity and output short-circuit protection are included. Its specification also matches searches for an Omron 7 m PNP sensor and Omron M12 emitter receiver sensor. For the corresponding NPN E3S through-beam model with M12 connection, see E3S-AT66.