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Omron E3JM-10M4-G-NN Through-Beam Photoelectric Sensor

Omron E3JM-10M4-G-NN is a relay-output through-beam photoelectric sensor with a 10 m sensing distance and 950 nm infrared LED. Separate transmitting and receiving units create the optical path, while the SPDT relay supports industrial switching requirements. The sensor accepts 12 to 240 VDC and 24 to 240 VAC at 50/60 Hz and uses a terminal block for electrical connection. Light-ON and Dark-ON operation can be selected, while ON-delay, OFF-delay, or one-shot delay functions are also available according to the supplied specification. Response time is 30 ms max. The E3JM-10M4-G-NN belongs to the E3JM Series. Similar timer-equipped options can be reviewed under relay through-beam sensors across the wider sensing range offered through Omron Sensors.

Omron E3JM-10M4-G-NN Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3JM-10M4-G-NN

Omron E3JM-10M4-G-NN Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodThroughbeam (Emitter + Receiver)
Sensing Distance10 m
Standard Sensing ObjectOpaque: 14.8-mm dia. min
Light SourceInfrared LED (950 nm)
Power Supply Voltage12 to 240 VDC, ripple (p-p): 10% max. 24 to 240 VAC, 50/60 Hz
Output ConfigurationRelay
Connection MethodTerminal block
Control OutputSPDT, 250 VAC, 3A (cosφ=1) max., 5 VDC, 10 mA min.
Operation ModeLight-ON Dark-ON (switch selectable)
Response TimeOperate or reset: 30 ms max.
Timer FunctionON-delay/OFF-delay/One-shot delay switch selectable
Ambient IlluminationIncandescent lamp: 3,000 lx max.
Ambient Temperature RangeOperating: −25°C to 55°C, Storage: −30°C to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 45% to 85% (with no condensation), Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC
Dielectric Strength2,000 VAC, 50/60 Hz for 1 min.
Vibration Resistance10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions
Shock Resistance500 m/s2 3 times each in X, Y, and Z directions, 100 m/s2 3 times each in X, Y, and Z directions
Degree Of ProtectionIEC 60529: IP66
MaterialABS (Acrylonitril Butadiene Styrene), Methacrylic resin, Polycarbonate, Iron
WeightApprox. 270 g

The Omron E3JM-10M4-G-NN Photoelectric Sensor uses through-beam sensing across a distance of up to 10 m with a 950 nm infrared LED and SPDT relay output. Separate transmitting and receiving units create the optical path, allowing the relay state to change when an object interrupts the beam. The sensor accepts 12 to 240 VDC and 24 to 240 VAC at 50/60 Hz and uses a terminal block for electrical connection. Power consumption is 3 W max., with 1 W max. specified for the emitter and 2 W max. for the receiver. Light-ON and Dark-ON operation are switch selectable, while ON-delay, OFF-delay, or one-shot delay can also be selected. Operate or reset time is 30 ms max., and the relay is rated up to 3 A at 250 VAC under the specified resistive-load condition.

For an Omron timer photoelectric sensor requiring 10 m through-beam sensing and relay output, the corresponding model is the E3JM-10M4-G-NN. Its selectable timing functions provide additional control over the switching sequence, while the wide AC/DC supply range supports different machine power systems. The specification also matches searches for an Omron 10 m relay sensor and Omron AC DC photoelectric sensor. Operating temperature extends from -25 to 55°C, while the terminal-block connection provides a serviceable wiring arrangement. For a related E3JM 10 m relay model without the NN timer configuration, see E3JM-10M4-G-N.