Omron E3Z-R66 Photoelectric Sensor
Omron E3Z-R66 is a retro-reflective photoelectric sensor with an M.S.R. function and a specified sensing range from 100 mm to 3 m. Its 660 nm red LED establishes the optical path toward the reflector, while the NPN output communicates the switching state to compatible PLC and machine-control inputs. Selectable Light-ON and Dark-ON operation supports different control sequences. The sensor operates from 12 to 24 VDC and uses an M8 connector for electrical integration. Current consumption is specified at 30 mA maximum, while operate or reset time is 1 ms maximum. A one-turn adjuster supports sensing setup. Within the E3Z Series, the E3Z-R66 provides connector wiring within the 3 m retro-reflective sensor range across Omron Sensing Products.
| Brand | Omron |
| Product | Photoelectric Sensors |
| Model Number | E3Z-R66 |
Omron E3Z-R66 Photoelectric Sensor – Technical Specifications
| Specification | Value |
|---|---|
| Sensing Method | Retro-reflective with M.S.R. function |
| Sensing Distance | 100 mm to 3 m |
| Light Source | Red LED (660 nm) |
| Power Supply Voltage | 12 to 24 VDC |
| Output Configuration | NPN |
| Connection Method | M8 connector |
| Current Consumption | 30 mA max. |
| Operation Mode | Light-ON/Dark-ON |
| Response Time | Operate or reset: 1 ms max |
| Sensitivity Adjustment | One-turn adjuster |
| Ambient Illumination | Incandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max |
| Ambient Temperature Range | Operating: −25 to 55°C, Some connector models: −40°C to 55°C * (with no icing or condensation) Storage: −40 to 70°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 35% to 85%, Storage: 35% to 95% (with no condensation) |
| Insulation Resistance | 20 MΩ min. at 500 VDC |
| Dielectric Strength | 1,000 VAC, 50/60 Hz for 1 min |
| Vibration Resistance | Destruction: 10 to 55 Hz, 1.5 mm double amplitude for 2 hours each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 3 times each in X, Y, and Z directions |
| Protection Circuits | Reversed power supply polarity protection, Output short-circuit protection, Mutual interference prevention, and Reversed output polarity protection |
| Degree Of Protection | IEC, IP67 |
| Material | PBT (polybutylene terephthalate) |
| Weight | Approx. 20 g |
The Omron E3Z-R66 Photoelectric Sensor uses retro-reflective sensing with an M.S.R. function across a specified range from 100 mm to 3 m. A 660 nm red LED establishes the optical path toward the reflector, while the NPN output transfers the switching state to compatible machine-control inputs. The sensor operates from 12 to 24 VDC and consumes up to 30 mA. Light-ON or Dark-ON operation can be selected according to the required control sequence, and operate or reset time is specified at 1 ms maximum. A one-turn adjuster supports sensing setup, while an M8 connector provides removable machine-side wiring. Ambient-light limits are stated at 3,000 lx for incandescent illumination and 10,000 lx for sunlight. Reversed supply polarity, output short-circuit, mutual-interference, and reversed output-polarity protection are specified.
For an Omron retro-reflective sensor requiring NPN output, an M.S.R. function, and M8 connector wiring, the relevant model is the E3Z-R66. Operating temperature is stated from -25 to 55°C under the supplied conditions, while storage extends from -40 to 70°C. Operating humidity covers 35% to 85%, and PBT is listed as the housing material. The connector configuration is useful where the sensor may need to be disconnected without replacing permanently routed machine wiring. Its specifications also suit requirements for an Omron 3 m retro-reflective sensor and Omron NPN M8 photoelectric sensor. For a related pre-wired NPN model using a 2 m cable, see E3Z-R61 2M.
