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Omron E3Z-LR66 Photoelectric Sensor

Omron E3Z-LR66 is a laser retro-reflective photoelectric sensor with an MSR function for sensing opaque targets from 0.2 to 7 m when used with the E39-R12 reflector. Its 655 nm red laser establishes the optical path toward the reflector, while the NPN open-collector output communicates the switching state to compatible machine-control equipment. Light-ON or Dark-ON operation can be selected according to the required logic. The sensor operates from 12 to 24 VDC and uses a 4-pin M8 connector for detachable wiring. Current consumption is specified at 30 mA maximum, response time at 1 ms maximum, and a one-turn adjuster supports sensitivity setting. Within the E3Z Series, the E3Z-LR66 provides connector-based NPN sensing within the long-range laser sensor range across Omron Automation Sensors.

Omron E3Z-LR66 Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3Z-LR66

Omron E3Z-LR66 Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodRetro-reflective with MSR function
Sensing DistanceWhen using the E39-R12: 0.2 to 7 m
Standard Sensing ObjectOpaque: 75-mm dia. min.
Light SourceRed LD (655 nm), Laser Class 1
Power Supply Voltage12 to 24 VDC
Output ConfigurationNPN
Connection MethodConnector (M8, 4 pins)
Current Consumption30 mA max.
Control OutputLoad power supply voltage: 26.4 VDC max., Load current: 100 mA max., Open collector output
Operation ModeLight-ON/Dark-ON
Response TimeOperate or reset: 1 ms max.
Sensitivity AdjustmentOne-turn adjuster
IndicatorsOperation indicator (orange), Stability indicator (green)
Ambient IlluminationIncandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max.
Ambient Temperature RangeOperating: −10 to 55°C, Storage: −25 to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 35% to 85%, Storage: 35% to 95% (with no icing or condensation)
Insulation Resistance20 MΩ min. at 500 VDC
Dielectric Strength1,000 VAC, 50/60 Hz for 1 min
Vibration ResistanceDestruction: 10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions
Shock ResistanceDestruction: 500 m/s2 3 times each in X, Y, and Z directions
Protection CircuitsReversed power supply polarity protection, Output short-circuit protection, Mutual interference prevention, and Reversed output polarity protection
Degree Of ProtectionIP67 (IEC 60529)
MaterialPBT (polybutylene terephthalate), Methacrylic resin
WeightApprox. 30 g

The Omron E3Z-LR66 Photoelectric Sensor uses laser retro-reflective sensing with an MSR function across a range from 0.2 to 7 m when used with the E39-R12 reflector. Its 655 nm red laser establishes the optical path between the sensor and reflector, while the NPN open-collector output supports a load supply voltage up to 26.4 VDC and load current up to 100 mA. Light-ON or Dark-ON operation can be selected according to the required control logic. The sensor operates from 12 to 24 VDC and uses a 4-pin M8 connector for electrical integration. Current consumption is specified at 30 mA maximum, response time at 1 ms maximum, and a one-turn adjuster supports sensitivity setting.

For an Omron long-range laser sensor requiring NPN output, an M8 connector, and retro-reflective MSR sensing, the applicable model is the E3Z-LR66. Ambient-light resistance reaches 3,000 lx under incandescent light and 10,000 lx under sunlight. Operating temperature extends from -10 to 55°C, while storage covers -25 to 70°C without icing or condensation. Reverse supply polarity, output short-circuit, mutual-interference, and reversed-output polarity protection are included. PBT and methacrylic resin are listed as construction materials. The detachable M8 connection supports machine wiring where connector-based replacement is preferred. Its specification also suits searches for an Omron NPN M8 laser sensor and Omron 7 m retro-reflective sensor. For the PNP M8 version with the same 0.2 to 7 m range, see the E3Z-LR86.