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Omron E3S-AR66 Photoelectric Sensor

Omron E3S-AR66 is an NPN retro-reflective photoelectric sensor with a vertical optical arrangement and MSR function for object sensing up to 2 m with the E39-R1 reflector. Its 660 nm red LED establishes the sensing path, while the NPN output transfers the switching state to compatible industrial control equipment. The sensor operates from 10 to 30 VDC and uses an M12 connector for detachable electrical connection. Light-ON or Dark-ON operation can be selected according to the required logic, and a two-turn endless adjuster supports sensitivity setup. Response time is specified at 0.5 ms. Within the E3S Series, the E3S-AR66 provides the vertical NPN connector configuration. Explore NPN retro-reflective sensors across Omron Industrial Sensors.

Omron E3S-AR66 Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3S-AR66

Omron E3S-AR66 Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodRetro-reflective Sensors
Sensing Distance2 m (100 mm)
Standard Sensing ObjectOpaque: 75-mm dia. min.
Light SourceRed LED (660 nm)
Power Supply Voltage10 to 30 VDC, including ripple (p-p) 10%
Output ConfigurationNPN
Connection MethodConnector (M12)
Current Consumption30 mA max. (plus approx. 15 mA with turbo function)
Control OutputLoad power supply voltage: 30 VDC max., Load current: 100 mA max. (residual voltage: 1 V max.)
Operation ModeLight-ON/Dark-ON selectable
Response TimeOperation or reset: 0.5 ms max.
Sensitivity AdjustmentTwo-turn endless adjuster with an indicator
Ambient IlluminationIncandescent lamp: 5,000 lx max. Sunlight: 10,000 lx max.
Ambient Temperature RangeOperating: −25°C to 55°C (with no icing or condensation) Storage: −40°C to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 35% to 85% (with no condensation) Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC between current-carrying parts and case
Dielectric Strength1,000 VAC, 50/60 Hz for 1 min. between current-carrying parts and case
Vibration Resistance10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions
Shock ResistanceDestruction: 500m/s2, 3 times each in X, Y, and Z directions
Protection CircuitsPower supply reverse polarity protection, Output short-circuit protection, Mutual interference prevention
Degree Of ProtectionIEC IP67; NEMA: 4X (indoors only)
MaterialPBT, Denatured polyallylate, Stainless steel (SUS304)
WeightApprox. 60 g

The Omron E3S-AR66 Photoelectric Sensor uses retro-reflective sensing with an MSR function and a vertical optical arrangement across a maximum distance of 2 m with the E39-R1 reflector. A 660 nm red LED provides the optical source, while the NPN output transfers the switching state to compatible control circuitry. The sensor operates from 10 to 30 VDC and uses an M12 connector for detachable electrical connection. Current consumption is specified at 30 mA maximum, with approximately 15 mA additional consumption when turbo mode is active. Load current is rated up to 100 mA with load supply voltage up to 30 VDC. Light-ON or Dark-ON operation is selectable, while a two-turn endless adjuster supports sensitivity setting. Response time is specified at 0.5 ms maximum.

For an Omron NPN retro reflective photoelectric sensor requiring vertical sensing orientation, MSR, and M12 wiring, the corresponding model is the E3S-AR66. The stated target is an opaque object with a minimum diameter of 75 mm. Ambient-light resistance reaches 5,000 lx under incandescent light and 10,000 lx under sunlight. Operating temperature extends from -25 to 55°C, while storage ranges from -40 to 70°C. Power-supply reverse polarity, output short-circuit, and mutual-interference prevention are specified. Its configuration also suits searches for an Omron vertical NPN sensor and Omron 2 m MSR sensor. For a PNP vertical E3S version using the same retro-reflective sensing range and M12 connector format, see E3S-AR86.