Omron E3Z-T81K-M3J 0.3M Photoelectric Sensor
Omron E3Z-T81K-M3J 0.3M is a through-beam photoelectric sensor designed for object sensing across a specified distance of 15 m. The sensing arrangement uses the E3Z-T81K-L-M3J emitter and E3Z-T81K-D-M3J receiver, with an 870 nm infrared LED establishing the optical path between them. The PNP output communicates the switching state to compatible machine-control circuitry, while selectable Light-ON and Dark-ON operation supports different control requirements. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 connector for electrical integration. Total current consumption is specified at 35 mA maximum, while response time is 1 ms maximum. Within the E3Z Series, the E3Z-T81K-M3J 0.3M provides connector wiring within the 15 m PNP through-beam sensor range across Omron Industrial Sensors.
| Brand | Omron |
| Product | Photoelectric Sensors |
| Model Number | E3Z-T81K-M3J 0.3M |
Omron E3Z-T81K-M3J 0.3M Photoelectric Sensor – Technical Specifications
| Specification | Value |
|---|---|
| Sensing Method | Through-beam |
| Sensing Distance | 15 m |
| Emitter Number | E3Z-T81K-L-M3J 2M |
| Receiver Number | E3Z-T81K-D-M3J 2M |
| Light Source | Infrared LED (870 nm) |
| Power Supply Voltage | 12 to 24 VDC |
| Output Configuration | PNP |
| Connection Method | Pre-wired M8 connector |
| Current Consumption | 35 mA max. (Emitter: 15 mA max., Receiver: 20 mA max.) |
| Operation Mode | Light-ON/Dark-ON |
| Response Time | Operate or reset: 1 ms max |
| Sensitivity Adjustment | One-turn adjuster |
| Ambient Illumination | Incandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max |
| Ambient Temperature Range | Operating: −25 to 55°C, Some connector models: −40°C to 55°C * (with no icing or condensation) Storage: −40 to 70°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 35% to 85%, Storage: 35% to 95% (with no condensation) |
| Insulation Resistance | 20 MΩ min. at 500 VDC |
| Dielectric Strength | 1,000 VAC, 50/60 Hz for 1 min |
| Vibration Resistance | Destruction: 10 to 55 Hz, 1.5 mm double amplitude for 2 hours each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 3 times each in X, Y, and Z directions |
| Protection Circuits | Reversed power supply polarity protection, Output short-circuit protection, and Reversed output polarity protection |
| Degree Of Protection | IEC, IP67 |
| Material | PBT (polybutylene terephthalate) |
| Weight | Approx. 50 g |
The Omron E3Z-T81K-M3J 0.3M Photoelectric Sensor uses through-beam sensing across a specified distance of 15 m. The sensing arrangement includes the E3Z-T81K-L-M3J emitter and E3Z-T81K-D-M3J receiver, with an 870 nm infrared LED establishing the optical path between them. The PNP output communicates the switching state to compatible industrial control circuitry. The units operate from 12 to 24 VDC and consume 35 mA maximum in total, with 15 mA maximum specified for the emitter and 20 mA maximum for the receiver. Light-ON or Dark-ON operation can be selected according to the required switching logic, while operate or reset time is 1 ms maximum. A one-turn adjuster supports setup, and the pre-wired M8 connector provides a removable electrical interface for machine wiring.
For an Omron PNP through-beam photoelectric sensor requiring 15 m sensing and an M8 connection, the relevant model is the E3Z-T81K-M3J. Operating temperature is stated from -25 to 55°C under the supplied conditions, with storage extending from -40 to 70°C. Ambient-light resistance is specified at 3,000 lx for incandescent illumination and 10,000 lx for sunlight. Reversed power-supply polarity protection, output short-circuit protection, and reversed output-polarity protection are listed. PBT is specified as the housing material. The connector arrangement provides an alternative to fixed cable versions where machine-side wiring can remain in place during sensor replacement. For a related E3Z-T81K version using conventional 5 m pre-wired cables, see E3Z-T81K 5M.
