Omron E3Z-T66 Photoelectric Sensor
The Omron E3Z-T66 Photoelectric Sensor provides through-beam object detection over distances up to 15 m by using a separate emitter and receiver positioned across the sensing area. An object is detected when it interrupts the infrared optical path established by the 870 nm LED source. The sensor provides an NPN output for connection to compatible industrial controllers and supports selectable Light-ON or Dark-ON operation to match different machine sequences. It operates from a 12 to 24 VDC supply and uses an M8 connector for compact electrical integration into machinery. The sensing system includes the E3Z-T66-L emitter and E3Z-T66-D receiver. The E3Z-T66 represents a 15 m through-beam option in the E3Z Series and connects with the through-beam photoelectric sensor range available through Omron industrial sensing.
| Brand | Omron |
| Product | Photoelectric Sensors |
| Model Number | E3Z-T66 |
Omron E3Z-T66 Photoelectric Sensor – Technical Specifications
| Specification | Value |
|---|---|
| Sensing Method | Through-beam |
| Sensing Distance | 15 m |
| Emitter Number | E3Z-T66-L |
| Receiver Number | E3Z-T66-D |
| Light Source | Infrared LED (870 nm) |
| Power Supply Voltage | 12 to 24 VDC |
| Output Configuration | NPN |
| Connection Method | M8 connector |
| Current Consumption | 35 mA max. (Emitter: 15 mA max., Receiver: 20 mA max.) |
| Operation Mode | Light-ON/Dark-ON |
| Response Time | Operate or reset: 1 ms max |
| Sensitivity Adjustment | One-turn adjuster |
| Ambient Illumination | Incandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max |
| Ambient Temperature Range | Operating: −25 to 55°C, Some connector models: −40°C to 55°C * (with no icing or condensation) Storage: −40 to 70°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 35% to 85%, Storage: 35% to 95% (with no condensation) |
| Insulation Resistance | 20 MΩ min. at 500 VDC |
| Dielectric Strength | 1,000 VAC, 50/60 Hz for 1 min |
| Vibration Resistance | Destruction: 10 to 55 Hz, 1.5 mm double amplitude for 2 hours each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 3 times each in X, Y, and Z directions |
| Protection Circuits | Reversed power supply polarity protection, Output short-circuit protection, and Reversed output polarity protection |
| Degree Of Protection | IEC, IP67 |
| Material | PBT (polybutylene terephthalate) |
| Weight | Approx. 30 g |
The Omron E3Z-T66 Photoelectric Sensor uses through-beam sensing across a specified distance of 15 m. The sensing arrangement includes the E3Z-T66-L emitter and E3Z-T66-D receiver, with an 870 nm infrared LED establishing the optical path between them. The NPN output communicates the switching state to compatible industrial control circuitry. The units operate from 12 to 24 VDC and consume 35 mA maximum in total, with 15 mA maximum specified for the emitter and 20 mA maximum for the receiver. Light-ON or Dark-ON operation can be selected according to the required switching logic, while operate or reset time is 1 ms maximum. A one-turn adjuster supports setup, and an M8 connector provides removable electrical connection. Ambient-light limits are stated at 3,000 lx for incandescent illumination and 10,000 lx for sunlight.
For an Omron through-beam photoelectric sensor requiring NPN output, 15 m sensing, and M8 connector wiring, the relevant model is the E3Z-T66. Operating temperature is specified from -25 to 55°C under the supplied conditions, while storage extends from -40 to 70°C. Reversed power-supply polarity protection, output short-circuit protection, and reversed output-polarity protection are listed. PBT is specified as the housing material. The connector arrangement provides an alternative to fixed pre-wired versions where machine-side wiring can remain in place when the sensor is disconnected. Its specifications also suit requirements for an Omron NPN M8 sensor and Omron 15 m through-beam sensor. For a related pre-wired NPN version using 2 m cables, see E3Z-T61 2M.
