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Omron E3Z-LT66 Photoelectric Sensor

Omron E3Z-LT66 is a laser through-beam photoelectric sensor designed for object sensing across a specified distance of up to 60 m. Its sensing arrangement uses the E3Z-LT66-L emitter and E3Z-LT66-D receiver, with a 655 nm red laser diode establishing the optical beam between them. The NPN output communicates the switching state to compatible machine-control circuitry, while Light-ON and Dark-ON operation supports different control requirements. The sensor operates from 12 to 24 VDC and uses an M8 4-pin connector arrangement for electrical integration. Total current consumption is specified at 35 mA, while response time is 1 ms maximum. Within the E3Z Series, the E3Z-LT66 supports connector wiring within the 60 m laser through-beam sensor range across Omron Sensor Range.

Omron E3Z-LT66 Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3Z-LT66

Omron E3Z-LT66 Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodThrough-beam
Sensing Distance60 m
Emitter NumberE3Z-LT66-L
Receiver NumberE3Z-LT66-D
Standard Sensing ObjectOpaque: 12-mm dia. min.
Light SourceRed LD (655 nm), Laser Class 1
Power Supply Voltage12 to 24 VDC
Output ConfigurationNPN
Connection MethodConnector (M8, 4 pins)
Current Consumption35 mA (Emitter 15 mA, Receiver 20 mA)
Control OutputLoad power supply voltage: 26.4 VDC max., Load current: 100 mA max., Open collector output
Operation ModeLight-ON/Dark-ON
Response TimeOperate or reset: 1 ms max.
Sensitivity AdjustmentOne-turn adjuster
IndicatorsOperation indicator (orange) , Stability indicator (green), Emitter for Through-bream Models has power indicator (orange) only.
Ambient IlluminationIncandescent lamp: 3,000 lx max., Sunlight: 10,000 lx max.
Ambient Temperature RangeOperating: −10 to 55°C, Storage: −25 to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 35% to 85%, Storage: 35% to 95% (with no icing or condensation)
Insulation Resistance20 MΩ min. at 500 VDC
Dielectric Strength1,000 VAC, 50/60 Hz for 1 min
Vibration ResistanceDestruction: 10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions
Shock ResistanceDestruction: 500 m/s2 3 times each in X, Y, and Z directions
Protection CircuitsReversed power supply polarity protection, Output short-circuit protection, and Reversed output polarity protection
Degree Of ProtectionIP67 (IEC 60529)
MaterialPBT (polybutylene terephthalate), Modified polyarylate resin
WeightApprox. 30 g

The Omron E3Z-LT66 Photoelectric Sensor uses laser through-beam sensing across a specified distance of up to 60 m. Its optical arrangement consists of the E3Z-LT66-L emitter and E3Z-LT66-D receiver, with a 655 nm red laser diode establishing the beam between the two units. An opaque target of 12 mm diameter minimum is specified. The NPN open-collector output supports a load supply voltage up to 26.4 VDC and load current up to 100 mA. The sensing arrangement operates from 12 to 24 VDC and consumes 35 mA in total, with 15 mA specified for the emitter and 20 mA for the receiver. Light-ON or Dark-ON operation is available, while response time is specified at 1 ms maximum. An M8 4-pin connector arrangement provides the electrical interface.

For an Omron NPN laser through-beam sensor requiring connector wiring and a 60 m sensing distance, the relevant model is the E3Z-LT66. A one-turn adjuster supports setup, while operation and stability indicators provide visual status information and the emitter includes a power indicator. Operating temperature is specified from -10 to 55°C, with storage from -25 to 70°C. Reversed power-supply polarity protection, output short-circuit protection, and reversed output polarity protection are included. Ambient-light resistance reaches 3,000 lx for incandescent illumination and 10,000 lx for sunlight. For a related pre-wired NPN model using 2 m cables and the same stated sensing distance, see E3Z-LT61 2M.