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Omron E3Z-G82-M3J Photoelectric Sensor

Omron E3Z-G82-M3J is a grooved photoelectric sensor designed around a fixed 25 mm sensing gap for opaque targets as small as 1.5 mm in diameter. Its 940 nm infrared LED establishes the optical path across the groove, while the PNP output transfers the switching state to compatible machine-control circuitry. Selectable Light-ON and Dark-ON operation supports different control logic. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 4-pin connector for electrical integration. Current consumption is specified at 40 mA maximum, while response time is 1 ms maximum. An orange operation indicator provides visual status information. Within the E3Z Series, the E3Z-G82-M3J provides an M8-connected PNP option for connector-based grooved sensors across Omron Automation Sensors.

Omron E3Z-G82-M3J Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3Z-G82-M3J

Omron E3Z-G82-M3J Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodGrooved type
Sensing Distance25 mm
Standard Sensing ObjectOpaque, 1.5-mm dia. min.
Light SourceInfrared LED (940 nm)
Power Supply Voltage12 to 24 VDC
Output ConfigurationPNP
Connection MethodPre-wired Connector (M8, 4 pins)
Current Consumption40 mA max.
Control OutputLoad power supply voltage: 26.4 VDC max. Load current: 100 mA max. (Residual voltage: 1 V max.)
Operation ModeLight-ON/Dark-ON selectable
Response TimeOperate or reset: 1 ms max.
IndicatorsOperation indicator (orange)
Ambient IlluminationIncandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max.
Ambient Temperature RangeOperating: −25 to 55°C, Storage: −40 to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 35% to 85%, Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC between lead wires and case
Dielectric Strength1,000 VAC, 50/60 Hz for 1 min between lead wires and case
Vibration ResistanceDestruction: 10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions
Shock ResistanceDestruction: 500 m/s2 3 times each in X, Y, and Z directions
Protection CircuitsReversed power supply polarity protection, Output short-circuit protection, and Mutual interference prevention
Degree Of ProtectionIP64 (IEC 60529)
MaterialABS (Acrylonitril Butadiene Styrene)
WeightApprox. 30 g

The Omron E3Z-G82-M3J Photoelectric Sensor uses grooved sensing with a fixed 25 mm gap for opaque targets as small as 1.5 mm in diameter. A 940 nm infrared LED establishes the optical path across the groove, while the PNP output supports up to 100 mA load current and a load supply voltage up to 26.4 VDC. Light-ON or Dark-ON operation can be selected according to the required machine sequence. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 4-pin connector. Current consumption is specified at 40 mA maximum, while response time is 1 ms maximum. An orange operation indicator provides visual status information during machine operation.

For an Omron grooved photoelectric sensor requiring PNP output and an M8 connector, the applicable model is the E3Z-G82-M3J. Ambient-light resistance reaches 3,000 lx under incandescent light and 10,000 lx under sunlight. Operating temperature extends from -25 to 55°C, with storage from -40 to 70°C without icing or condensation. Reverse supply polarity, output short-circuit, and mutual-interference protection are listed. ABS is specified as the housing material, while IP64 enclosure protection is stated. The connector arrangement supports easier wiring changes compared with a fixed-cable installation. Its specification also matches searches for an Omron PNP M8 sensor and Omron 25 mm grooved sensor. For the fixed-cable PNP version with a 2 m pre-wired connection, see the E3Z-G82 2M.