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Omron E3Z-G82 2M Photoelectric Sensor

Omron E3Z-G82 2M is a grooved photoelectric sensor with a fixed 25 mm sensing gap for opaque targets as small as 1.5 mm in diameter. Its 940 nm infrared LED establishes the optical path across the groove, while the PNP output communicates the switching state to compatible industrial control equipment. Light-ON or Dark-ON operation can be selected according to the required machine sequence. The sensor operates from 12 to 24 VDC and includes a 2 m pre-wired cable. Current consumption is specified at 40 mA maximum, while response time is 1 ms maximum. An orange operation indicator provides visual switching information. Within the E3Z Series, the E3Z-G82 2M provides the PNP wired configuration for grooved PNP sensors across Omron Industrial Sensors.

Omron E3Z-G82 2M Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3Z-G82 2M

Omron E3Z-G82 2M Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodGrooved type
Sensing Distance25 mm
Standard Sensing ObjectOpaque, 1.5-mm dia. min.
Light SourceInfrared LED (940 nm)
Power Supply Voltage12 to 24 VDC
Output ConfigurationPNP
Connection MethodPre-wired 2 M cable
Current Consumption40 mA max.
Control OutputLoad power supply voltage: 26.4 VDC max. Load current: 100 mA max. (Residual voltage: 1 V max.)
Operation ModeLight-ON/Dark-ON selectable
Response TimeOperate or reset: 1 ms max.
IndicatorsOperation indicator (orange)
Ambient IlluminationIncandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max.
Ambient Temperature RangeOperating: −25 to 55°C, Storage: −40 to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 35% to 85%, Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC between lead wires and case
Dielectric Strength1,000 VAC, 50/60 Hz for 1 min between lead wires and case
Vibration ResistanceDestruction: 10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions
Shock ResistanceDestruction: 500 m/s2 3 times each in X, Y, and Z directions
Protection CircuitsReversed power supply polarity protection, Output short-circuit protection, and Mutual interference prevention
Degree Of ProtectionIP64 (IEC 60529)
MaterialABS (Acrylonitril Butadiene Styrene)
WeightApprox. 65 g

The Omron E3Z-G82 2M Photoelectric Sensor uses a grooved sensing arrangement with a fixed 25 mm gap for opaque targets as small as 1.5 mm in diameter. Its 940 nm infrared LED establishes the optical path across the groove, while the PNP output supports a load supply voltage up to 26.4 VDC and load current up to 100 mA. Light-ON or Dark-ON operation can be selected according to the required machine logic. The sensor operates from 12 to 24 VDC and includes a 2 m pre-wired cable. Current consumption is specified at 40 mA maximum, while operate or reset time is 1 ms maximum. An orange operation indicator provides visual switching status.

For an Omron grooved sensor requiring PNP output and a fixed 25 mm sensing point, the relevant model is the E3Z-G82. Ambient-light resistance is specified at 3,000 lx under incandescent light and 10,000 lx under sunlight. Operating temperature extends from -25 to 55°C, while storage covers -40 to 70°C without icing or condensation. Reverse supply polarity, output short-circuit, and mutual-interference protection are included. ABS is specified as the housing material, while IP64 enclosure protection is stated. The fixed slot supports repeatable small-part sensing within compact equipment. Its specification also suits searches for an Omron PNP slot sensor and Omron 25 mm photoelectric sensor. For an M8-connected version using the same PNP architecture and 25 mm sensing gap, see the E3Z-G82-M3J.