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Omron E3Z-G62-M3J 0.3M Photoelectric Sensor

Omron E3Z-G62-M3J 0.3M is a grooved through-beam photoelectric sensor designed around a fixed 25 mm sensing path. The emitter and receiver are positioned across the groove within the sensor assembly, creating a predefined optical path for objects passing through the slot. Its 940 nm infrared LED provides the sensing light, while the NPN output communicates the switching state to compatible machine-control circuitry. Light-ON or Dark-ON operation can be selected according to the required logic. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 connector. Current consumption is specified at 40 mA maximum, while response time is 1 ms maximum. Within the E3Z Series, the E3Z-G62-M3J 0.3M provides compact connector wiring for 25 mm slot sensors across the Omron Sensor Range.

Omron E3Z-G62-M3J 0.3M Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3Z-G62-M3J 0.3M

Omron E3Z-G62-M3J 0.3M Photoelectric Sensor – Technical Specifications

SpecificationValue
AppearanceGrooved Type
Sensing MethodThrough-beam
Sensing Distance25 mm
Light SourceInfrared LED (940 nm)
Power Supply Voltage12 to 24 VDC
Output ConfigurationNPN
Connection MethodPre-wired Connector M8
Current Consumption40 mA max.
Operation ModeLight-ON/Dark-ON
Response TimeOperate or reset: 1 ms max.
Sensitivity AdjustmentOne-turn adjuster
Ambient IlluminationIncandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max
Ambient Temperature RangeOperating: −25 to 55°C, Some connector models: −40°C to 55°C * (with no icing or condensation) Storage: −40 to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 35% to 85%, Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC
Dielectric Strength1,000 VAC, 50/60 Hz for 1 min
Vibration ResistanceDestruction: 10 to 55 Hz, 1.5 mm double amplitude for 2 hours each in X, Y, and Z directions
Shock ResistanceDestruction: 500 m/s2 3 times each in X, Y, and Z directions
Protection CircuitsReversed power supply polarity protection, Output short-circuit protection, and Mutual interference prevention
Degree Of ProtectionIP64 (IEC 60529)
MaterialABS (Acrylonitril Butadiene Styrene)
WeightApprox. 30 g

The Omron E3Z-G62-M3J 0.3M Photoelectric Sensor uses a grooved through-beam arrangement with a fixed 25 mm sensing path. The emitter and receiver are located across the groove within the same assembly, establishing a predefined optical path for a target passing through the opening. Its 940 nm infrared LED provides the sensing beam, while the NPN output communicates the switching state to compatible industrial control equipment. Light-ON or Dark-ON operation can be selected according to the required machine logic. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 connector. Current consumption is specified at 40 mA maximum, while response time is 1 ms maximum. A one-turn adjuster supports sensitivity setting.

For an Omron grooved photoelectric sensor requiring integrated optics, NPN output, and compact connector wiring, the relevant model is the E3Z-G62-M3J. Ambient-light resistance is specified at 3,000 lx under incandescent light and 10,000 lx under sunlight. Operating temperature extends from -25 to 55°C, while storage covers -40 to 70°C without icing or condensation. Reverse supply polarity, output short-circuit, and mutual-interference protection are included. ABS is specified as the housing material, while IP64 enclosure protection is stated. Its structure also suits searches for an Omron M8 grooved sensor and Omron NPN slot sensor. For another E3Z-G62 option using the same M3J connector format, see the E3Z-G62-M3J.