Omron E3Z-G61-M3J 0.3M Photoelectric Sensor
Omron E3Z-G61-M3J 0.3M is a grooved through-beam photoelectric sensor with a fixed 25 mm sensing path. The emitter and receiver are positioned on opposite sides of the groove, so the optical path is established inside the same sensor assembly without separate external alignment. A 940 nm infrared LED supplies the sensing light, while the NPN output communicates the switching state to compatible control equipment. Light-ON or Dark-ON operation can be selected according to the required logic. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 connector. Current consumption is specified at 25 mA maximum. Within the E3Z Series, the E3Z-G61-M3J 0.3M provides an integrated option for grooved through-beam sensors across Omron Industrial Sensors.
| Brand | Omron |
| Product | Photoelectric Sensors |
| Model Number | E3Z-G61-M3J 0.3M |
Omron E3Z-G61-M3J 0.3M Photoelectric Sensor – Technical Specifications
| Specification | Value |
|---|---|
| Appearance | Grooved Type |
| Sensing Method | Through-beam |
| Sensing Distance | 25 mm |
| Light Source | Infrared LED (940 nm) |
| Power Supply Voltage | 12 to 24 VDC |
| Output Configuration | NPN |
| Connection Method | Pre-wired Connector M8 |
| Current Consumption | 25 mA max. |
| Operation Mode | Light-ON/Dark-ON |
| Response Time | Operate or reset: 1 ms max. |
| Sensitivity Adjustment | One-turn adjuster |
| Ambient Illumination | Incandescent lamp: 3,000 lx max. Sunlight: 10,000 lx max |
| Ambient Temperature Range | Operating: −25 to 55°C, Some connector models: −40°C to 55°C * (with no icing or condensation) Storage: −40 to 70°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 35% to 85%, Storage: 35% to 95% (with no condensation) |
| Insulation Resistance | 20 MΩ min. at 500 VDC |
| Dielectric Strength | 1,000 VAC, 50/60 Hz for 1 min |
| Vibration Resistance | Destruction: 10 to 55 Hz, 1.5 mm double amplitude for 2 hours each in X, Y, and Z directions |
| Shock Resistance | Destruction: 500 m/s2 3 times each in X, Y, and Z directions |
| Protection Circuits | Reversed power supply polarity protection, Output short-circuit protection, and Mutual interference prevention |
| Degree Of Protection | IP64 (IEC 60529) |
| Material | ABS (Acrylonitril Butadiene Styrene) |
| Weight | Approx. 30 g |
The Omron E3Z-G61-M3J 0.3M Photoelectric Sensor uses a grooved through-beam arrangement with a fixed 25 mm optical path. The emitter and receiver are integrated on opposite sides of the groove, so no separate external alignment is required. A 940 nm infrared LED supplies the sensing beam, while interruption by a target changes the NPN output state. Light-ON or Dark-ON operation can be selected according to the required control sequence. The sensor operates from 12 to 24 VDC and uses a pre-wired M8 connector for electrical integration. Current consumption is specified at 25 mA maximum, while operate or reset time is 1 ms maximum. A one-turn adjuster supports sensitivity setting for the sensing arrangement.
For an Omron grooved sensor requiring integrated through-beam optics, NPN output, and compact M8 wiring, the applicable model is the E3Z-G61-M3J. Ambient-light resistance reaches 3,000 lx under incandescent light and 10,000 lx under sunlight. Operating temperature extends from -25 to 55°C, while storage covers -40 to 70°C without icing or condensation. Reverse supply polarity, output short-circuit, and mutual-interference protection are listed. ABS is specified as the housing material, and IP64 enclosure protection is stated. Its structure also suits searches for an Omron slot sensor and Omron M8 NPN photoelectric sensor. For another E3Z-G61 version using the M3J connector format, see the E3Z-G61-M3J.
