Omron E3S-CT66 Photoelectric Sensor
Omron E3S-CT66 is a through-beam photoelectric sensor designed for long-distance object sensing across a maximum range of 30 m. Its 850 nm infrared LED establishes the optical path between separate sensing units, while the output changes when an object interrupts the transmitted light. The sensor operates from 10 to 30 VDC and supports selectable NPN or PNP open-collector output for compatible machine-control circuitry. Light-ON or Dark-ON operation can be selected, while a one-turn adjuster supports sensitivity setup. Response time is specified at 1 ms, and an M12 connector provides detachable electrical connection. Within the E3S Series, the E3S-CT66 provides the connector-based 30 m configuration. Explore M12 through-beam sensors across the Omron Sensor Range.
| Brand | Omron |
| Product | Photoelectric Sensors |
| Model Number | E3S-CT66 |
Omron E3S-CT66 Photoelectric Sensor – Technical Specifications
| Specification | Value |
|---|---|
| Sensing Method | Through-beam |
| Sensing Distance | 30 m |
| Light Source | Infrared LED (850 nm) |
| Power Supply Voltage | 10 to 30 VDC |
| Connection Method | M12 Connector |
| Current Consumption | 40 mA max |
| Control Output | Load power supply voltage: 30 VDC max. Load current: 100 mA max. (Residual voltage: NPN output: 1.2 V max., PNP output: 2.0 V max.) Open controller output (NPN/PNP selectable) |
| Operation Mode | Light-ON/Dark-ON selectable |
| Response Time | Operate or reset: 1 ms max |
| Sensitivity Adjustment | One-turn adjuster |
| Ambient Illumination | Incandescent lamp: 5,000 lx max. Sunlight: 10,000 lx max. |
| Ambient Temperature Range | Operating: −25°C to 55°C, Storage: −40°C to 70°C (with no icing or condensation) |
| Ambient Humidity Range | Operating: 35% to 85%, Storage: 35% to 95% (with no condensation) |
| Insulation Resistance | 20 MΩ min. (at 500 VDC) |
| Dielectric Strength | 1,000 VAC, 50/60 Hz for 1 min |
| Vibration Resistance | Destruction: 10 to 2,000 Hz, 1.5-mm double amplitude or 300 m/s2 for 0.5 hours each in X, Y, and Z directions |
| Shock Resistance | Destruction: 1,000 m/s2 3 times each in X, Y, and Z directions |
| Protection Circuits | Power supply reverse polarity circuit protection, Output short-circuit protection |
| Degree Of Protection | IEC 60529: IP67 (in-house standards: oil-resistant), NEMA: 6P (indoors only) |
The Omron E3S-CT66 Photoelectric Sensor uses through-beam sensing for object sensing across a maximum distance of 30 m. Its 850 nm infrared LED establishes the optical path between separate sensing units, while the output changes when a target interrupts the transmitted light. The sensor operates from 10 to 30 VDC and uses an M12 connector for detachable electrical integration. NPN or PNP open-collector output can be selected, with load current rated at 100 mA maximum and load supply voltage up to 30 VDC. Light-ON or Dark-ON operation can also be selected. Current consumption is specified at 40 mA maximum, while a one-turn adjuster supports sensitivity setup. Operate or reset time is specified at 1 ms maximum.
For an Omron M12 through beam photoelectric sensor requiring a 30 m optical path and selectable NPN/PNP output, the corresponding model is the E3S-CT66. Ambient-light resistance reaches 5,000 lx under incandescent light and 10,000 lx under sunlight. Operating temperature extends from -25 to 55°C, while storage ranges from -40 to 70°C. Power-supply reverse polarity and output short-circuit protection are listed. Its configuration also suits searches for an Omron 30 m M12 sensor and Omron NPN PNP through beam sensor. For an E3S 30 m through-beam version using pre-wired emitter and receiver units, see E3S-CT61 2M.
