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Omron E3JM-R4M4T-G Photoelectric Sensor

Omron E3JM-R4M4T-G is a retro-reflective photoelectric sensor with an MSR function for sensing opaque targets up to 4 m with the E39-R1 reflector. Its 660 nm red LED establishes the optical path, while an SPDT relay output transfers the switching state to compatible machine-control circuits. Light-ON or Dark-ON operation can be selected according to the required logic, and the adjustable timer covers 0.1 to 5 s. The sensor accepts 12 to 240 VDC or 24 to 240 VAC and uses a terminal-block wiring arrangement. Within the E3JM Series, the E3JM-R4M4T-G provides the G-version relay configuration. Similar relay output photoelectric sensors are available across Omron Sensor Products.

Omron E3JM-R4M4T-G Photoelectric Sensors
BrandOmron
ProductPhotoelectric Sensors
Model NumberE3JM-R4M4T-G

Omron E3JM-R4M4T-G Photoelectric Sensor – Technical Specifications

SpecificationValue
Sensing MethodRetroreflective with MSR function
Sensing Distance4 m (When using E39-R1)
Standard Sensing ObjectOpaque: 75-mm dia. min.
Light SourceRed LED (660 nm)
Power Supply Voltage12 to 240 VDC, ripple (p-p): 10% max. 24 to 240 VAC, 50/60 Hz
Output ConfigurationRelay
Connection MethodTerminal block
Control OutputSPDT, 250 VAC, 3A (cosφ=1) max., 5 VDC, 10 mA min.
Operation ModeLight-ON Dark-ON (switch selectable)
Response TimeOperate or reset: 30 ms max.
Timer FunctionDelay time: 0.1 to 5 s (adjustable)
Ambient IlluminationIncandescent lamp: 3,000 lx max.
Ambient Temperature RangeOperating: −25°C to 55°C, Storage: −30°C to 70°C (with no icing or condensation)
Ambient Humidity RangeOperating: 45% to 85% (with no condensation), Storage: 35% to 95% (with no condensation)
Insulation Resistance20 MΩ min. at 500 VDC
Dielectric Strength2,000 VAC, 50/60 Hz for 1 min.
Vibration Resistance10 to 55 Hz, 1.5-mm double amplitude for 2 hours each in X, Y, and Z directions
Shock Resistance500 m/s2 3 times each in X, Y, and Z directions, 100 m/s2 3 times each in X, Y, and Z directions
Degree Of ProtectionIEC 60529: IP66
MaterialABS (Acrylonitril Butadiene Styrene), Methacrylic resin, Polycarbonate, Iron
WeightApprox. 160 g

The Omron E3JM-R4M4T-G Photoelectric Sensor uses retro-reflective sensing with an MSR function for opaque targets positioned up to 4 m away when used with the E39-R1 reflector. A 660 nm red LED establishes the optical path, while an SPDT relay output supports switching up to 250 VAC at 3 A under the stated resistive-load condition. The sensor operates from 12 to 240 VDC or 24 to 240 VAC and provides selectable Light-ON or Dark-ON switching. An adjustable timer covers 0.1 to 5 s, while operate or reset time is specified at 30 ms maximum. The model uses terminal-block wiring, consumes up to 2 W, and supports incandescent-light levels up to the stated 3,000 lx.

For an Omron 4 m retro-reflective sensor requiring relay switching and the G-version arrangement, the corresponding model is the E3JM-R4M4T-G. Its operating temperature range is -25 to 55°C, while storage extends from -30 to 70°C where icing and condensation are absent. Listed materials include ABS, methacrylic resin, polycarbonate, and iron. Insulation resistance is specified at 20 MΩ minimum at 500 VDC, with dielectric strength of 2,000 VAC for one minute. Search terms such as Omron relay photoelectric sensor and Omron adjustable timer sensor also match this configuration. For the related US version within the same 4 m relay group, see the E3JM-R4M4T-US. This model supports presence sensing and timed switching where selectable output logic is required.